Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots

Jung Ho Yoon; Jeong Hwan Han; Ji Sim Jung; Woojin Jeon; Gun Hwan Kim; Seul Ji Song; Jun Yeong Seok; Kyung Jean Yoon; Min Hwan Lee; Cheol Seong Hwang

doi:10.1002/adma.201204572

Highly improved uniformity in the resistive switching parameters of TiO₂ thin films by inserting Ru nanodots

Jung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, Woojin Jeon, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Min Hwan Lee, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

Original language	English
Pages (from-to)	1987-1992
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	14
DOIs	https://doi.org/10.1002/adma.201204572
Publication status	Published - 2013 Apr 11

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201204572

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abstract = "Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.",

author = "Yoon, {Jung Ho} and Han, {Jeong Hwan} and Jung, {Ji Sim} and Woojin Jeon and Kim, {Gun Hwan} and Song, {Seul Ji} and Seok, {Jun Yeong} and Yoon, {Kyung Jean} and Lee, {Min Hwan} and Hwang, {Cheol Seong}",

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language = "English",

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AU - Yoon, Jung Ho

AU - Han, Jeong Hwan

AU - Jung, Ji Sim

AU - Jeon, Woojin

AU - Kim, Gun Hwan

AU - Song, Seul Ji

AU - Seok, Jun Yeong

AU - Yoon, Kyung Jean

AU - Lee, Min Hwan

AU - Hwang, Cheol Seong

PY - 2013/4/11

Y1 - 2013/4/11

N2 - Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

AB - Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

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JO - Advanced Materials

JF - Advanced Materials

IS - 14

ER -

Highly improved uniformity in the resistive switching parameters of TiO₂ thin films by inserting Ru nanodots

Abstract

All Science Journal Classification (ASJC) codes

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