Abstract
Highly linear receiver RF front-end adopting MOSFET transconductance linearization by linearly superposing several common-source FET transistors in parallel (multiple gated transistor, or MGTR), combined with some additional circuit techniques are reported. In MGTR circuitry, linearity is improved by using transconductance linearization which can be achieved by canceling the negative peak value of g″m of the main transistor with the positive one in the auxiliary transistor having a different size and gate drive combined in parallel. This enhancement, however, is limited by the distortion originated from the combined influence of g′m and harmonic feedback, which can greatly be reduced by the cascoding MGTR output for the amplifier and by the tuned load for the mixer. Experimental results designed using the above techniques show IIP3 improvements at given power consumption by as much as 10 dB for CMOS low-noise amplifier at 900 MHz and 7 dB for Gilbert cell mixer at 2.4 GHz without sacrificing other features such as gain and noise figure.
| Original language | English |
|---|---|
| Pages (from-to) | 223-229 |
| Number of pages | 7 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 39 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2004 Jan |
Bibliographical note
Funding Information:Manuscript received January 6, 2003; revised September 25, 2003. This work was supported in part by the MICROS Research Center, KAIST. T. W. Kim and K. Lee are with the Department of Electrical Engineering and Computer Sciences and the MICROS Research Center, Korea Advanced Institute of Science and Technology, Daejon 305-701, Korea (e-mail: open-cafe@dimple.kaist.ac.kr, krlee@ee.kaist.ac.kr). B. Kim is with Integrant Technologies, Inc., Kyunggi-do 463-760, Korea. Digital Object Identifier 10.1109/JSSC.2003.820843
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering