Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

H. S. Jeong, W. S. Yang, Y. S. Hwang, C. H. Cho, S. Park, S. J. Ahn, Y. S. Chun, S. H. Shin, S. H. Song, J. Y. Lee, S. M. Jang, C. H. Lee, J. H. Jeong, Mann-Ho Cho, J. K. Lee, K. Kim

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

4Gb DRAM has been developed successfully using 0.11μm DRAM technology. Considering manufacturability, we have focused to develop patterning technology that makes 0.11μm design rule possible using KrF lithography. Also, novel DRAM technologies, which give a big influence on the future DRAM integration, are developed as follows, using novel oxide(SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.

Original languageEnglish
Pages (from-to)353-356
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2000 Dec 1
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13

Fingerprint

Dynamic random access storage
oxides
metals
Oxides
electric contacts
lithography
Metals
vapor deposition
Lithography
Chemical vapor deposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Jeong, H. S., Yang, W. S., Hwang, Y. S., Cho, C. H., Park, S., Ahn, S. J., ... Kim, K. (2000). Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology. Technical Digest - International Electron Devices Meeting, 353-356.
Jeong, H. S. ; Yang, W. S. ; Hwang, Y. S. ; Cho, C. H. ; Park, S. ; Ahn, S. J. ; Chun, Y. S. ; Shin, S. H. ; Song, S. H. ; Lee, J. Y. ; Jang, S. M. ; Lee, C. H. ; Jeong, J. H. ; Cho, Mann-Ho ; Lee, J. K. ; Kim, K. / Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology. In: Technical Digest - International Electron Devices Meeting. 2000 ; pp. 353-356.
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author = "Jeong, {H. S.} and Yang, {W. S.} and Hwang, {Y. S.} and Cho, {C. H.} and S. Park and Ahn, {S. J.} and Chun, {Y. S.} and Shin, {S. H.} and Song, {S. H.} and Lee, {J. Y.} and Jang, {S. M.} and Lee, {C. H.} and Jeong, {J. H.} and Mann-Ho Cho and Lee, {J. K.} and K. Kim",
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Jeong, HS, Yang, WS, Hwang, YS, Cho, CH, Park, S, Ahn, SJ, Chun, YS, Shin, SH, Song, SH, Lee, JY, Jang, SM, Lee, CH, Jeong, JH, Cho, M-H, Lee, JK & Kim, K 2000, 'Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology', Technical Digest - International Electron Devices Meeting, pp. 353-356.

Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology. / Jeong, H. S.; Yang, W. S.; Hwang, Y. S.; Cho, C. H.; Park, S.; Ahn, S. J.; Chun, Y. S.; Shin, S. H.; Song, S. H.; Lee, J. Y.; Jang, S. M.; Lee, C. H.; Jeong, J. H.; Cho, Mann-Ho; Lee, J. K.; Kim, K.

In: Technical Digest - International Electron Devices Meeting, 01.12.2000, p. 353-356.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

AU - Jeong, H. S.

AU - Yang, W. S.

AU - Hwang, Y. S.

AU - Cho, C. H.

AU - Park, S.

AU - Ahn, S. J.

AU - Chun, Y. S.

AU - Shin, S. H.

AU - Song, S. H.

AU - Lee, J. Y.

AU - Jang, S. M.

AU - Lee, C. H.

AU - Jeong, J. H.

AU - Cho, Mann-Ho

AU - Lee, J. K.

AU - Kim, K.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - 4Gb DRAM has been developed successfully using 0.11μm DRAM technology. Considering manufacturability, we have focused to develop patterning technology that makes 0.11μm design rule possible using KrF lithography. Also, novel DRAM technologies, which give a big influence on the future DRAM integration, are developed as follows, using novel oxide(SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.

AB - 4Gb DRAM has been developed successfully using 0.11μm DRAM technology. Considering manufacturability, we have focused to develop patterning technology that makes 0.11μm design rule possible using KrF lithography. Also, novel DRAM technologies, which give a big influence on the future DRAM integration, are developed as follows, using novel oxide(SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.

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M3 - Conference article

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

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Jeong HS, Yang WS, Hwang YS, Cho CH, Park S, Ahn SJ et al. Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology. Technical Digest - International Electron Devices Meeting. 2000 Dec 1;353-356.