Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

H. S. Jeong, W. S. Yang, Y. S. Hwang, C. H. Cho, S. Park, S. J. Ahn, Y. S. Chun, S. H. Shin, S. H. Song, J. Y. Lee, S. M. Jang, C. H. Lee, J. H. Jeong, M. H. Cho, J. K. Lee, K. Kim

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13 Citations (Scopus)

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