Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping

Kyung Park, Jong Heon Kim, Taehoon Sung, Hyun Woo Park, Ju Heyuck Baeck, Jonguk Bae, Kwon Shik Park, Sooyoung Yoon, Inbyeong Kang, Kwun Bum Chung, Hyun Suk Kim, Jang Yeon Kwon

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3 Citations (Scopus)

Abstract

The electrical properties and the device reliability under positive/negative bias stress with/without illumination regarding amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) are evaluated as a function of the nitrogen partial pressure in the sputter deposition. Interestingly, it is easy to control the carrier concentration through the incorporation of nitrogen into IGZO, whereby the device performance is changed. In addition, when nitrogen is introduced during the conventional IGZO deposition, the device reliability of N-doped IGZO TFTs is considerably improved compared to that of undoped-IGZO TFTs due to the reduced amount of defects. It is also interesting that such an improvement of the device reliability regarding IGZO is easily obtainable through the simple addition of nitrogen to the conventional deposition process. It is, therefore, strongly believed that this simple nitrogen-doping process for IGZO is very effective regarding the achievement of highly durable devices, and it can be immediately applied to the current mass production of the high-performance displays for which the oxide semiconductor is used.

Original languageEnglish
Article number8556051
Pages (from-to)457-463
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number1
DOIs
Publication statusPublished - 2019 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Park, K., Kim, J. H., Sung, T., Park, H. W., Baeck, J. H., Bae, J., Park, K. S., Yoon, S., Kang, I., Chung, K. B., Kim, H. S., & Kwon, J. Y. (2019). Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping. IEEE Transactions on Electron Devices, 66(1), 457-463. [8556051]. https://doi.org/10.1109/TED.2018.2881799