Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation

Kwan Yong Lim, Min Gyu Sung, Heung Jae Cho, Yong Soo Kim, Se Aug Jang, Jae Geun Oh, Seung Ryong Lee, Kwangok Kim, Pil Soo Lee, Yun Seok Chun, Hong Seon Yang, Noh Jung Kwak, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages74-75
Number of pages2
Publication statusPublished - 2006 Dec 1
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 2006 Jun 132006 Jun 15

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Lim, K. Y., Sung, M. G., Cho, H. J., Kim, Y. S., Jang, S. A., Oh, J. G., Lee, S. R., Kim, K., Lee, P. S., Chun, Y. S., Yang, H. S., Kwak, N. J., Sohn, H. C., Kim, J. W., & Park, S. W. (2006). Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (pp. 74-75). [1705223] (Digest of Technical Papers - Symposium on VLSI Technology).