Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation

Kwan Yong Lim, Min Gyu Sung, Heung Jae Cho, Yong Soo Kim, Se Aug Jang, Jae Geun Oh, Seung Ryong Lee, Kwangok Kim, Pil Soo Lee, Yun Seok Chun, Hong Seon Yang, Noh Jung Kwak, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages74-75
Number of pages2
Publication statusPublished - 2006 Dec 1
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 2006 Jun 132006 Jun 15

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

Fingerprint

Tungsten
Plasmas
Data storage equipment
Diffusion barriers
Polysilicon
Transistors
Oxidation
Temperature
Oxides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lim, K. Y., Sung, M. G., Cho, H. J., Kim, Y. S., Jang, S. A., Oh, J. G., ... Park, S. W. (2006). Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (pp. 74-75). [1705223] (Digest of Technical Papers - Symposium on VLSI Technology).
Lim, Kwan Yong ; Sung, Min Gyu ; Cho, Heung Jae ; Kim, Yong Soo ; Jang, Se Aug ; Oh, Jae Geun ; Lee, Seung Ryong ; Kim, Kwangok ; Lee, Pil Soo ; Chun, Yun Seok ; Yang, Hong Seon ; Kwak, Noh Jung ; Sohn, Hyun Chul ; Kim, Jin Woong ; Park, Sung Wook. / Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation. 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. pp. 74-75 (Digest of Technical Papers - Symposium on VLSI Technology).
@inproceedings{3aecb29dc49c4366bb9738e7f696395d,
title = "Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation",
abstract = "We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices.",
author = "Lim, {Kwan Yong} and Sung, {Min Gyu} and Cho, {Heung Jae} and Kim, {Yong Soo} and Jang, {Se Aug} and Oh, {Jae Geun} and Lee, {Seung Ryong} and Kwangok Kim and Lee, {Pil Soo} and Chun, {Yun Seok} and Yang, {Hong Seon} and Kwak, {Noh Jung} and Sohn, {Hyun Chul} and Kim, {Jin Woong} and Park, {Sung Wook}",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "1424400058",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "74--75",
booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",

}

Lim, KY, Sung, MG, Cho, HJ, Kim, YS, Jang, SA, Oh, JG, Lee, SR, Kim, K, Lee, PS, Chun, YS, Yang, HS, Kwak, NJ, Sohn, HC, Kim, JW & Park, SW 2006, Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation. in 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers., 1705223, Digest of Technical Papers - Symposium on VLSI Technology, pp. 74-75, 2006 Symposium on VLSI Technology, VLSIT, Honolulu, HI, United States, 06/6/13.

Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation. / Lim, Kwan Yong; Sung, Min Gyu; Cho, Heung Jae; Kim, Yong Soo; Jang, Se Aug; Oh, Jae Geun; Lee, Seung Ryong; Kim, Kwangok; Lee, Pil Soo; Chun, Yun Seok; Yang, Hong Seon; Kwak, Noh Jung; Sohn, Hyun Chul; Kim, Jin Woong; Park, Sung Wook.

2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. p. 74-75 1705223 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation

AU - Lim, Kwan Yong

AU - Sung, Min Gyu

AU - Cho, Heung Jae

AU - Kim, Yong Soo

AU - Jang, Se Aug

AU - Oh, Jae Geun

AU - Lee, Seung Ryong

AU - Kim, Kwangok

AU - Lee, Pil Soo

AU - Chun, Yun Seok

AU - Yang, Hong Seon

AU - Kwak, Noh Jung

AU - Sohn, Hyun Chul

AU - Kim, Jin Woong

AU - Park, Sung Wook

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices.

AB - We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices.

UR - http://www.scopus.com/inward/record.url?scp=41149085122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149085122&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:41149085122

SN - 1424400058

SN - 9781424400058

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 74

EP - 75

BT - 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers

ER -

Lim KY, Sung MG, Cho HJ, Kim YS, Jang SA, Oh JG et al. Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. p. 74-75. 1705223. (Digest of Technical Papers - Symposium on VLSI Technology).