Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

Dong Jun Seong; Min Kyu Yang; Hyunsu Ju; Jung Moo Lee; Eunmi Kim; Seungjae Jung; Jinwoo Lee; Gun Hwan Kim; Seol Choi; Lijie Zhang; Seong Geon Park; Youn Seon Kang; In Gyu Baek; Jungdal Choi; Ho Kyu Kang; Eunseung Jung

doi:10.1109/IMW.2013.6582093

Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

Dong Jun Seong, Min Kyu Yang, Hyunsu Ju, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Jinwoo Lee, Gun Hwan Kim, Seol Choi, Lijie Zhang, Seong Geon Park, Youn Seon Kang, In Gyu Baek, Jungdal Choi, Ho Kyu Kang, Eunseung Jung

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.

Original language	English
Title of host publication	2013 5th IEEE International Memory Workshop, IMW 2013
Pages	42-43
Number of pages	2
DOIs	https://doi.org/10.1109/IMW.2013.6582093
Publication status	Published - 2013
Event	2013 5th IEEE International Memory Workshop, IMW 2013 - Monterey, CA, United States Duration: 2013 May 26 → 2013 May 29

Publication series

Name	2013 5th IEEE International Memory Workshop, IMW 2013

Conference

Conference	2013 5th IEEE International Memory Workshop, IMW 2013
Country/Territory	United States
City	Monterey, CA
Period	13/5/26 → 13/5/29

All Science Journal Classification (ASJC) codes

Software

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10.1109/IMW.2013.6582093

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Seong, D. J., Yang, M. K., Ju, H., Lee, J. M., Kim, E., Jung, S., Lee, J., Kim, G. H., Choi, S., Zhang, L., Park, S. G., Kang, Y. S., Baek, I. G., Choi, J., Kang, H. K., & Jung, E. (2013). Highly reliable ReRAM technology with encapsulation process for 20nm and beyond. In 2013 5th IEEE International Memory Workshop, IMW 2013 (pp. 42-43). [6582093] (2013 5th IEEE International Memory Workshop, IMW 2013). https://doi.org/10.1109/IMW.2013.6582093

@inproceedings{c3e0a3f1542b478cbfadafead71ac0a3,

title = "Highly reliable ReRAM technology with encapsulation process for 20nm and beyond",

abstract = "ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.",

author = "Seong, {Dong Jun} and Yang, {Min Kyu} and Hyunsu Ju and Lee, {Jung Moo} and Eunmi Kim and Seungjae Jung and Jinwoo Lee and Kim, {Gun Hwan} and Seol Choi and Lijie Zhang and Park, {Seong Geon} and Kang, {Youn Seon} and Baek, {In Gyu} and Jungdal Choi and Kang, {Ho Kyu} and Eunseung Jung",

year = "2013",

doi = "10.1109/IMW.2013.6582093",

language = "English",

isbn = "9781467361675",

series = "2013 5th IEEE International Memory Workshop, IMW 2013",

pages = "42--43",

booktitle = "2013 5th IEEE International Memory Workshop, IMW 2013",

note = "2013 5th IEEE International Memory Workshop, IMW 2013 ; Conference date: 26-05-2013 Through 29-05-2013",

}

Seong, DJ, Yang, MK, Ju, H, Lee, JM, Kim, E, Jung, S, Lee, J, Kim, GH, Choi, S, Zhang, L, Park, SG, Kang, YS, Baek, IG, Choi, J, Kang, HK & Jung, E 2013, Highly reliable ReRAM technology with encapsulation process for 20nm and beyond. in 2013 5th IEEE International Memory Workshop, IMW 2013., 6582093, 2013 5th IEEE International Memory Workshop, IMW 2013, pp. 42-43, 2013 5th IEEE International Memory Workshop, IMW 2013, Monterey, CA, United States, 13/5/26. https://doi.org/10.1109/IMW.2013.6582093

TY - GEN

T1 - Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

AU - Seong, Dong Jun

AU - Yang, Min Kyu

AU - Ju, Hyunsu

AU - Lee, Jung Moo

AU - Kim, Eunmi

AU - Jung, Seungjae

AU - Lee, Jinwoo

AU - Kim, Gun Hwan

AU - Choi, Seol

AU - Zhang, Lijie

AU - Park, Seong Geon

AU - Kang, Youn Seon

AU - Baek, In Gyu

AU - Choi, Jungdal

AU - Kang, Ho Kyu

AU - Jung, Eunseung

PY - 2013

Y1 - 2013

N2 - ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.

AB - ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.

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UR - http://www.scopus.com/inward/citedby.url?scp=84883681432&partnerID=8YFLogxK

U2 - 10.1109/IMW.2013.6582093

DO - 10.1109/IMW.2013.6582093

M3 - Conference contribution

AN - SCOPUS:84883681432

SN - 9781467361675

T3 - 2013 5th IEEE International Memory Workshop, IMW 2013

SP - 42

EP - 43

BT - 2013 5th IEEE International Memory Workshop, IMW 2013

T2 - 2013 5th IEEE International Memory Workshop, IMW 2013

Y2 - 26 May 2013 through 29 May 2013

ER -

Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

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