Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

Sung Pyo Park, Doo Hyun Yoon, Young Jun Tak, Heesoo Lee, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnOx RRAM devices could be one of the candidates for the development of low cost RRAM.

Original languageEnglish
Pages (from-to)9173-9176
Number of pages4
JournalChemical Communications
Volume51
Issue number44
DOIs
Publication statusPublished - 2015 Jun 4

Fingerprint

Zinc Oxide
Gallium
Zinc oxide
Hydrogen peroxide
Hydrogen Peroxide
Phase transitions
Data storage equipment
Costs

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices. / Park, Sung Pyo; Yoon, Doo Hyun; Tak, Young Jun; Lee, Heesoo; Kim, Hyun Jae.

In: Chemical Communications, Vol. 51, No. 44, 04.06.2015, p. 9173-9176.

Research output: Contribution to journalArticle

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AU - Park, Sung Pyo

AU - Yoon, Doo Hyun

AU - Tak, Young Jun

AU - Lee, Heesoo

AU - Kim, Hyun Jae

PY - 2015/6/4

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