Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

Sung Pyo Park; Doo Hyun Yoon; Young Jun Tak; Heesoo Lee; Hyun Jae Kim

doi:10.1039/c4cc10209f

Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO_x-based resistive random access memory devices

Sung Pyo Park, Doo Hyun Yoon, Young Jun Tak, Heesoo Lee, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO_x) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO_x RRAM devices could be one of the candidates for the development of low cost RRAM.

Original language	English
Pages (from-to)	9173-9176
Number of pages	4
Journal	Chemical Communications
Volume	51
Issue number	44
DOIs	https://doi.org/10.1039/c4cc10209f
Publication status	Published - 2015 Jun 4

All Science Journal Classification (ASJC) codes

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1039/c4cc10209f

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abstract = "Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnOx RRAM devices could be one of the candidates for the development of low cost RRAM.",

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AU - Park, Sung Pyo

AU - Yoon, Doo Hyun

AU - Tak, Young Jun

AU - Lee, Heesoo

AU - Kim, Hyun Jae

PY - 2015/6/4

Y1 - 2015/6/4

N2 - Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnOx RRAM devices could be one of the candidates for the development of low cost RRAM.

AB - Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnOx RRAM devices could be one of the candidates for the development of low cost RRAM.

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JF - Chemical Communications

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Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO_x-based resistive random access memory devices

Abstract

All Science Journal Classification (ASJC) codes

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