Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering

Dayoon Lee, Taeho Kim, Hyunchul Sohn

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Ga2Te3 is of great interest because of its memory and threshold switching properties and potential for memory device application. Here, device of TiN/Ga2Te3/TiN with two terminals was fabricated and its threshold switching was investigated. Current-voltage measurements showed the ovonic threshold switching of amorphous Ga2Te3 thin films at 300 K with a high switching speed of about 10 ns. AC pulse tests showed reliable switching endurance over 109 switching cycles with the selectivity of 103. Amorphous Ga2Te3 with outstanding stability is considered as potential materials for the selector devices of cross-point memory array.

Original languageEnglish
Article number085504
JournalApplied Physics Express
Issue number8
Publication statusPublished - 2019 Aug 1

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry & Energy, Korea under the Industrial Strategic Technology Development Program (Grant no. 100680075) and the Brain Korea 21 Plus Projects.

Publisher Copyright:
© 2019 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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