Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering

Dayoon Lee, Taeho Kim, Hyunchul Sohn

Research output: Contribution to journalArticle

Abstract

Ga2Te3 is of great interest because of its memory and threshold switching properties and potential for memory device application. Here, device of TiN/Ga2Te3/TiN with two terminals was fabricated and its threshold switching was investigated. Current-voltage measurements showed the ovonic threshold switching of amorphous Ga2Te3 thin films at 300 K with a high switching speed of about 10 ns. AC pulse tests showed reliable switching endurance over 109 switching cycles with the selectivity of 103. Amorphous Ga2Te3 with outstanding stability is considered as potential materials for the selector devices of cross-point memory array.

Original languageEnglish
Article number085504
JournalApplied Physics Express
Volume12
Issue number8
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Amorphous films
Sputtering
sputtering
thresholds
Data storage equipment
selectors
endurance
Voltage measurement
Electric current measurement
electrical measurement
alternating current
Durability
selectivity
Thin films
cycles
thin films
pulses

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering. / Lee, Dayoon; Kim, Taeho; Sohn, Hyunchul.

In: Applied Physics Express, Vol. 12, No. 8, 085504, 01.01.2019.

Research output: Contribution to journalArticle

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