Highly Reliable Top-Gated Thin-Film Transistor Memory with Semiconducting, Tunneling, Charge-Trapping, and Blocking Layers All of Flexible Polymers

Wei Wang, Sun Kak Hwang, Kang Lib Kim, Ju Han Lee, Suk Man Cho, Cheolmin Park

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 104, read and write endurance cycles over 100, and time-dependent data retention of 108 s, even when fabricated on a mechanically flexible plastic substrate. (Chemical Equation Presented).

Original languageEnglish
Pages (from-to)10957-10965
Number of pages9
JournalACS Applied Materials and Interfaces
Volume7
Issue number20
DOIs
Publication statusPublished - 2015 May 27

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Charge trapping
Thin film transistors
Polymers
Data storage equipment
Electrets
Spin coating
Durability
Plastics
Electrodes
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 104, read and write endurance cycles over 100, and time-dependent data retention of 108 s, even when fabricated on a mechanically flexible plastic substrate. (Chemical Equation Presented).",
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Highly Reliable Top-Gated Thin-Film Transistor Memory with Semiconducting, Tunneling, Charge-Trapping, and Blocking Layers All of Flexible Polymers. / Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 20, 27.05.2015, p. 10957-10965.

Research output: Contribution to journalArticle

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AB - The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 104, read and write endurance cycles over 100, and time-dependent data retention of 108 s, even when fabricated on a mechanically flexible plastic substrate. (Chemical Equation Presented).

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