Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

Seongin Hong; Nicolò Zagni; Sooho Choo; Na Liu; Seungho Baek; Arindam Bala; Hocheon Yoo; Byung Ha Kang; Hyun Jae Kim; Hyung Joong Yun; Muhammad Ashraful Alam; Sunkook Kim

doi:10.1038/s41467-021-23711-x

Highly sensitive active pixel image sensor array driven by large-area bilayer MoS₂ transistor circuitry

Seongin Hong, Nicolò Zagni, Sooho Choo, Na Liu, Seungho Baek, Arindam Bala, Hocheon Yoo, Byung Ha Kang, Hyun Jae Kim, Hyung Joong Yun, Muhammad Ashraful Alam, Sunkook Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS₂ film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS₂ switching transistors and 2D MoS₂ phototransistors. The maximum photoresponsivity (R_ph) of the bilayer MoS₂ phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W⁻¹. With the aid of computational modeling, we find that the main mechanism for the high R_ph of the bilayer MoS₂ phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS₂ active pixel image sensor array are successfully investigated using light stencil projection.

Original language	English
Article number	3559
Journal	Nature communications
Volume	12
Issue number	1
DOIs	https://doi.org/10.1038/s41467-021-23711-x
Publication status	Published - 2021 Dec 1

Bibliographical note

Funding Information:
This research was supported in part by the National Research Foundation of Korea (2021R1A2B5B02002167, 2021M3H4A1A02056037, 2020H1D3A2A02103378, and 2020R1I1A1A01070907).

Publisher Copyright:
© 2021, The Author(s).

All Science Journal Classification (ASJC) codes

General
Physics and Astronomy(all)
Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)

Access to Document

10.1038/s41467-021-23711-x

Cite this

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title = "Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry",

abstract = "Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.",

author = "Seongin Hong and Nicol{\`o} Zagni and Sooho Choo and Na Liu and Seungho Baek and Arindam Bala and Hocheon Yoo and Kang, {Byung Ha} and Kim, {Hyun Jae} and Yun, {Hyung Joong} and Alam, {Muhammad Ashraful} and Sunkook Kim",

note = "Funding Information: This research was supported in part by the National Research Foundation of Korea (2021R1A2B5B02002167, 2021M3H4A1A02056037, 2020H1D3A2A02103378, and 2020R1I1A1A01070907). Publisher Copyright: {\textcopyright} 2021, The Author(s).",

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AU - Zagni, Nicolò

AU - Choo, Sooho

AU - Liu, Na

AU - Baek, Seungho

AU - Bala, Arindam

AU - Yoo, Hocheon

AU - Kang, Byung Ha

AU - Kim, Hyun Jae

AU - Yun, Hyung Joong

AU - Alam, Muhammad Ashraful

AU - Kim, Sunkook

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N2 - Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.

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