A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa-1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.
Bibliographical noteFunding Information:
This work is supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT and Future Planning (MSIP) (NRF-2017R1A2B2002721) and the Korea Institute of Science and Technology (KIST) institutional program (2V05530). Also, this work was supported by the Center for Advanced Soft-Electronics under the Global Frontier Project (NRF-2014M3A6A5060932) and the Basic Science Research Program (NRF-2017R1A2B4012819) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning.
All Science Journal Classification (ASJC) codes
- Materials Science(all)