Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene-Bi2Se3 Heterostructure

Jaeseok Kim, Sungjoon Park, Houk Jang, Nikesh Koirala, Jae Bok Lee, Un Jeong Kim, Hong Seok Lee, Young Geun Roh, Hyangsook Lee, Sangwan Sim, Soonyoung Cha, Chihun In, Jun Park, Jekwan Lee, Minji Noh, Jisoo Moon, Maryam Salehi, Jiho Sung, Sang Soo Chee, Moon Ho HamMoon Ho Jo, Seongshik Oh, Jong Hyun Ahn, Sung Woo Hwang, Dohun Kim, Hyunyong Choi

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Broadband detection of mid-infrared (IR) photons extends to advanced optoelectronic applications such as imaging, sensing, and telecommunications. While graphene offers an attractive platform for broadband visible/IR photodetection, previous efforts to improve its responsivity, for example, by integrating light-absorbing colloids or waveguide or antenna fabrication, were achieved at the cost of reduced photon detection bandwidth. In this work, we demonstrate room-temperature operation of a novel mid-IR photodetector based on a graphene-Bi2Se3 heterostructure showing broadband detection and high responsivity (1.97 and 8.18 A/W at mid- and near-IR, respectively), in which simultaneous improvement of the spectral range and responsivity is achieved via exploiting broadband absorption of mid-IR and IR photons in a small-band-gap Bi2Se3 topological insulator and efficient hot carrier separation and strong photogating across the Bi2Se3/graphene interface. With sufficient room for further improvement by interface engineering, our results show a promising route to realize ultrabroadband, high-responsivity hot-carrier optoelectronics at room temperature.

Original languageEnglish
Pages (from-to)482-488
Number of pages7
JournalACS Photonics
Volume4
Issue number3
DOIs
Publication statusPublished - 2017 Mar 15

Bibliographical note

Funding Information:
J.K., S.P., S.S., S.C., C.I., J.P., J.L., M.N., and H.C. were supported by the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (Grant Nos. NRF-2015R1A2A1A10052520, NRF-2016R1A4A1012929), and Global Frontier Program (2014M3A6B3063709). J.S. and M.J. were supported by Institute for Basic Science (IBS), Korea, under the Project Code IBS-R014-G1-2016-a00. D.K. was supported by the Basic Science Research Program through the NRF funded by the Ministry of Science, ICT and Future Planning (Grant No. NRF-2015R1C1A1A02037430). S.C. and M.H. were supported by the Nation Research Foundation of Korea (NRF) through the government of Korea (MSIP) (Grant No. NRF-2016R1A4A1012929). N.K., M.S., J.M., and S.O. are supported by the National Science Foundation of the USA (DMR-1308142 and EFMA-1542798) and the Gordon and Betty Moore Foundation?s EPiQS Initiative (GBMF4418).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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