Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent

Yeonju Kim, Jun Min Lee, Seung Hyun Lee, Wooyoung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages736-737
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Chemical sensors
Nanowires
Sensors
Electron beam lithography
Gases

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, Y., Lee, J. M., Lee, S. H., & Lee, W. (2010). Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 736-737). [5424551] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424551
Kim, Yeonju ; Lee, Jun Min ; Lee, Seung Hyun ; Lee, Wooyoung. / Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 736-737 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).
@inproceedings{fad35d31da6e4af19dbc048a7e1b5baa,
title = "Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent",
abstract = "We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).",
author = "Yeonju Kim and Lee, {Jun Min} and Lee, {Seung Hyun} and Wooyoung Lee",
year = "2010",
month = "5",
day = "5",
doi = "10.1109/INEC.2010.5424551",
language = "English",
isbn = "9781424435449",
series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
pages = "736--737",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

}

Kim, Y, Lee, JM, Lee, SH & Lee, W 2010, Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424551, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 736-737, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424551

Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. / Kim, Yeonju; Lee, Jun Min; Lee, Seung Hyun; Lee, Wooyoung.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 736-737 5424551 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent

AU - Kim, Yeonju

AU - Lee, Jun Min

AU - Lee, Seung Hyun

AU - Lee, Wooyoung

PY - 2010/5/5

Y1 - 2010/5/5

N2 - We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).

AB - We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).

UR - http://www.scopus.com/inward/record.url?scp=77951664099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951664099&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424551

DO - 10.1109/INEC.2010.5424551

M3 - Conference contribution

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 736

EP - 737

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

ER -

Kim Y, Lee JM, Lee SH, Lee W. Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 736-737. 5424551. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424551