Abstract
We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).
| Original language | English |
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| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 736-737 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Publication series
| Name | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
|---|
Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 10/1/3 → 10/1/8 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. / Kim, Yeonju; Lee, Jun Min; Lee, Seung Hyun; Lee, Wooyoung.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 736-737 5424551 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent
AU - Kim, Yeonju
AU - Lee, Jun Min
AU - Lee, Seung Hyun
AU - Lee, Wooyoung
PY - 2010/5/5
Y1 - 2010/5/5
N2 - We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).
AB - We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).
UR - http://www.scopus.com/inward/record.url?scp=77951664099&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951664099&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424551
DO - 10.1109/INEC.2010.5424551
M3 - Conference contribution
AN - SCOPUS:77951664099
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 736
EP - 737
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -