Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent

Yeonju Kim; Jun Min Lee; Seung Hyun Lee; Wooyoung Lee

doi:10.1109/INEC.2010.5424551

Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent

Yeonju Kim, Jun Min Lee, Seung Hyun Lee, Wooyoung Lee

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	736-737
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424551
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424551

Fingerprint Dive into the research topics of 'Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent'. Together they form a unique fingerprint.

Cite this

@inproceedings{fad35d31da6e4af19dbc048a7e1b5baa,

title = "Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent",

abstract = "We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).",

author = "Yeonju Kim and Lee, {Jun Min} and Lee, {Seung Hyun} and Wooyoung Lee",

year = "2010",

doi = "10.1109/INEC.2010.5424551",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "736--737",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

}

Kim, Y, Lee, JM, Lee, SH & Lee, W 2010, Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424551, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 736-737, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424551

Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent. / Kim, Yeonju; Lee, Jun Min; Lee, Seung Hyun; Lee, Wooyoung.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 736-737 5424551 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent

AU - Kim, Yeonju

AU - Lee, Jun Min

AU - Lee, Seung Hyun

AU - Lee, Wooyoung

PY - 2010

Y1 - 2010

N2 - We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).

AB - We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylmethylphosphonate (DMMP).

UR - http://www.scopus.com/inward/record.url?scp=77951664099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951664099&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424551

DO - 10.1109/INEC.2010.5424551

M3 - Conference contribution

AN - SCOPUS:77951664099

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 736

EP - 737

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -