Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation

Choong Ki Kim, Eun Gyo Jeong, Eungtaek Kim, Jeong Gyu Song, Youngjun Kim, Whang Je Woo, Myung Keun Lee, Hagyoul Bae, Seong Bae Jeon, Hyungjun Kim, Kyung Cheol Choi, Yang Kyu Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Field-effect transistors (FETs) composed of 2D materials (2DMs) such as transition-metal dichalcogenide (TMD) materials show unstable electrical characteristics in ambient air due to the high sensitivity of 2DMs to water adsorbates. In this work, in order to demonstrate the long-term retention of electrical characteristics of a TMD FET, a multidyad encapsulation method was applied to a MoS 2 FET and thereby its durability was warranted for one month. It was well known that the multidyad encapsulation method was effective to mitigate high sensitivity to ambient air in light-emitting diodes (LEDs) composed of organic materials. However, there was no attempt to check the feasibility of such a multidyad encapsulation method for 2DM FETs. It is timely to investigate the water vapor transmission ratio (WVTR) required for long-term stability of 2DM FETs. The 2DM FETs were fabricated with MoS 2 flakes by both an exfoliation method, that is desirable to attain high quality film, and a chemical vapor deposition (CVD) method, that is applicable to fabrication for a large-sized substrate. In order to eliminate other unwanted variables, the MoS 2 FETs composed of exfoliated flakes were primarily investigated to assure the effectiveness of the encapsulation method. The encapsulation method uses multiple dyads comprised of a polymer layer by spin coating and an Al 2 O 3 layer deposited by atomic layer deposition (ALD). The proposed method shows wafer-scale uniformity, high transparency, and protective barrier properties against adsorbates (WVTR of 8 × 10 -6 g m -2 day -1 ) over one month.

Original languageEnglish
Article number055203
JournalNanotechnology
Volume28
Issue number5
DOIs
Publication statusPublished - 2017 Feb 3

Fingerprint

Field effect transistors
Encapsulation
Steam
Adsorbates
Water vapor
Transition metals
Atomic layer deposition
Spin coating
Air
Transparency
Light emitting diodes
Chemical vapor deposition
Polymers
Durability
Fabrication
Water
Substrates

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Kim, C. K., Jeong, E. G., Kim, E., Song, J. G., Kim, Y., Woo, W. J., ... Choi, Y. K. (2017). Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation. Nanotechnology, 28(5), [055203]. https://doi.org/10.1088/1361-6528/aa5235
Kim, Choong Ki ; Jeong, Eun Gyo ; Kim, Eungtaek ; Song, Jeong Gyu ; Kim, Youngjun ; Woo, Whang Je ; Lee, Myung Keun ; Bae, Hagyoul ; Jeon, Seong Bae ; Kim, Hyungjun ; Choi, Kyung Cheol ; Choi, Yang Kyu. / Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation. In: Nanotechnology. 2017 ; Vol. 28, No. 5.
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abstract = "Field-effect transistors (FETs) composed of 2D materials (2DMs) such as transition-metal dichalcogenide (TMD) materials show unstable electrical characteristics in ambient air due to the high sensitivity of 2DMs to water adsorbates. In this work, in order to demonstrate the long-term retention of electrical characteristics of a TMD FET, a multidyad encapsulation method was applied to a MoS 2 FET and thereby its durability was warranted for one month. It was well known that the multidyad encapsulation method was effective to mitigate high sensitivity to ambient air in light-emitting diodes (LEDs) composed of organic materials. However, there was no attempt to check the feasibility of such a multidyad encapsulation method for 2DM FETs. It is timely to investigate the water vapor transmission ratio (WVTR) required for long-term stability of 2DM FETs. The 2DM FETs were fabricated with MoS 2 flakes by both an exfoliation method, that is desirable to attain high quality film, and a chemical vapor deposition (CVD) method, that is applicable to fabrication for a large-sized substrate. In order to eliminate other unwanted variables, the MoS 2 FETs composed of exfoliated flakes were primarily investigated to assure the effectiveness of the encapsulation method. The encapsulation method uses multiple dyads comprised of a polymer layer by spin coating and an Al 2 O 3 layer deposited by atomic layer deposition (ALD). The proposed method shows wafer-scale uniformity, high transparency, and protective barrier properties against adsorbates (WVTR of 8 × 10 -6 g m -2 day -1 ) over one month.",
author = "Kim, {Choong Ki} and Jeong, {Eun Gyo} and Eungtaek Kim and Song, {Jeong Gyu} and Youngjun Kim and Woo, {Whang Je} and Lee, {Myung Keun} and Hagyoul Bae and Jeon, {Seong Bae} and Hyungjun Kim and Choi, {Kyung Cheol} and Choi, {Yang Kyu}",
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Kim, CK, Jeong, EG, Kim, E, Song, JG, Kim, Y, Woo, WJ, Lee, MK, Bae, H, Jeon, SB, Kim, H, Choi, KC & Choi, YK 2017, 'Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation', Nanotechnology, vol. 28, no. 5, 055203. https://doi.org/10.1088/1361-6528/aa5235

Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation. / Kim, Choong Ki; Jeong, Eun Gyo; Kim, Eungtaek; Song, Jeong Gyu; Kim, Youngjun; Woo, Whang Je; Lee, Myung Keun; Bae, Hagyoul; Jeon, Seong Bae; Kim, Hyungjun; Choi, Kyung Cheol; Choi, Yang Kyu.

In: Nanotechnology, Vol. 28, No. 5, 055203, 03.02.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation

AU - Kim, Choong Ki

AU - Jeong, Eun Gyo

AU - Kim, Eungtaek

AU - Song, Jeong Gyu

AU - Kim, Youngjun

AU - Woo, Whang Je

AU - Lee, Myung Keun

AU - Bae, Hagyoul

AU - Jeon, Seong Bae

AU - Kim, Hyungjun

AU - Choi, Kyung Cheol

AU - Choi, Yang Kyu

PY - 2017/2/3

Y1 - 2017/2/3

N2 - Field-effect transistors (FETs) composed of 2D materials (2DMs) such as transition-metal dichalcogenide (TMD) materials show unstable electrical characteristics in ambient air due to the high sensitivity of 2DMs to water adsorbates. In this work, in order to demonstrate the long-term retention of electrical characteristics of a TMD FET, a multidyad encapsulation method was applied to a MoS 2 FET and thereby its durability was warranted for one month. It was well known that the multidyad encapsulation method was effective to mitigate high sensitivity to ambient air in light-emitting diodes (LEDs) composed of organic materials. However, there was no attempt to check the feasibility of such a multidyad encapsulation method for 2DM FETs. It is timely to investigate the water vapor transmission ratio (WVTR) required for long-term stability of 2DM FETs. The 2DM FETs were fabricated with MoS 2 flakes by both an exfoliation method, that is desirable to attain high quality film, and a chemical vapor deposition (CVD) method, that is applicable to fabrication for a large-sized substrate. In order to eliminate other unwanted variables, the MoS 2 FETs composed of exfoliated flakes were primarily investigated to assure the effectiveness of the encapsulation method. The encapsulation method uses multiple dyads comprised of a polymer layer by spin coating and an Al 2 O 3 layer deposited by atomic layer deposition (ALD). The proposed method shows wafer-scale uniformity, high transparency, and protective barrier properties against adsorbates (WVTR of 8 × 10 -6 g m -2 day -1 ) over one month.

AB - Field-effect transistors (FETs) composed of 2D materials (2DMs) such as transition-metal dichalcogenide (TMD) materials show unstable electrical characteristics in ambient air due to the high sensitivity of 2DMs to water adsorbates. In this work, in order to demonstrate the long-term retention of electrical characteristics of a TMD FET, a multidyad encapsulation method was applied to a MoS 2 FET and thereby its durability was warranted for one month. It was well known that the multidyad encapsulation method was effective to mitigate high sensitivity to ambient air in light-emitting diodes (LEDs) composed of organic materials. However, there was no attempt to check the feasibility of such a multidyad encapsulation method for 2DM FETs. It is timely to investigate the water vapor transmission ratio (WVTR) required for long-term stability of 2DM FETs. The 2DM FETs were fabricated with MoS 2 flakes by both an exfoliation method, that is desirable to attain high quality film, and a chemical vapor deposition (CVD) method, that is applicable to fabrication for a large-sized substrate. In order to eliminate other unwanted variables, the MoS 2 FETs composed of exfoliated flakes were primarily investigated to assure the effectiveness of the encapsulation method. The encapsulation method uses multiple dyads comprised of a polymer layer by spin coating and an Al 2 O 3 layer deposited by atomic layer deposition (ALD). The proposed method shows wafer-scale uniformity, high transparency, and protective barrier properties against adsorbates (WVTR of 8 × 10 -6 g m -2 day -1 ) over one month.

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