Highly stable bottom-gate nanocrystalline silicon thin film transistor fabricated employing ICP-CVD

Sun Jae Kim, Sang Myeon Han, Jang Yeon Kwon, Ji Sim Jung, Min Koo Hana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Bottom-gate nanocrystalline silicon (nc-Si) thin film transistors (TFTs) were fabricated and evaluated their characteristics and electrical stability under various stress condition. nc-Si with high crystallinity was deposited employing Inductively coupled plasma chemical vapor deposition(ICP-CVD) system. We employed helium gas diluted deposition and all the process temperature was kept under 350°C. We fabricated conventional inverted-staggered nc-Si TFTs. Fabricated nc-Si TFTs showed fine electrical characteristics, such as electrical mobility of 0.64-0.77 cm2/V.sec. We investigated its stability through constant-voltage stress and constant-current stress. The threshold voltage shift after 30, 000 seconds gate bias (10V) stress was only 0.098V, which is considerably less compared to a-Si:H TFT. Under the static current stress condition, the threshold voltage of the nc-Si TFT was shifted less than that of a-Si:H TFT. It demonstrates that nc-Si TFT exhibit better stability than conventional a-Si:H TFT.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages171-176
Number of pages6
Edition9
DOIs
Publication statusPublished - 2008 Dec 1
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 16

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kim, S. J., Han, S. M., Kwon, J. Y., Jung, J. S., & Hana, M. K. (2008). Highly stable bottom-gate nanocrystalline silicon thin film transistor fabricated employing ICP-CVD. In ECS Transactions - Thin Film Transistors 9, TFT 9 (9 ed., pp. 171-176). (ECS Transactions; Vol. 16, No. 9). https://doi.org/10.1149/1.2980547