Bottom-gate nanocrystalline silicon (nc-Si) thin film transistors (TFTs) were fabricated and evaluated their characteristics and electrical stability under various stress condition. nc-Si with high crystallinity was deposited employing Inductively coupled plasma chemical vapor deposition(ICP-CVD) system. We employed helium gas diluted deposition and all the process temperature was kept under 350°C. We fabricated conventional inverted-staggered nc-Si TFTs. Fabricated nc-Si TFTs showed fine electrical characteristics, such as electrical mobility of 0.64-0.77 cm2/V.sec. We investigated its stability through constant-voltage stress and constant-current stress. The threshold voltage shift after 30, 000 seconds gate bias (10V) stress was only 0.098V, which is considerably less compared to a-Si:H TFT. Under the static current stress condition, the threshold voltage of the nc-Si TFT was shifted less than that of a-Si:H TFT. It demonstrates that nc-Si TFT exhibit better stability than conventional a-Si:H TFT.