Highly stable double-gate Ga-In-Zn-O thin-film transistor

Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Tae Sang Kim, Joon Seok Park, Keechan Park, Jang Yeon Kwon, Bonwon Koo, Sang Yoon Lee

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We report the electrical stability of double-gate (DG) Ga-In-Zn-O thin-film transistors (TFTs). The threshold voltage (VT) shift of the DG TFT after 3 h of positivebias temperature stress (VGS = +20 V, V DS = +0.1 V, and Temperature = 60 °C) is as small as +2.7 V, while that of a conventional single-gate (SG) TFT is +6.6 V. The results of negative-bias temperature stress [(NBTS); VGS =.20 V, VDS = +10 V, and Temperature = 60 °C] are more dramatic: The VT shift of the DG TFT is only +0.1 V, whereas that of the SG TFT is.9.1 V. With backlight illumination, the VT shift of the SG TFT under the same NBTS becomes severe (.11.1 V). However, it remains as small as.0.7 V for the DG TFT.

Original languageEnglish
Article number5491056
Pages (from-to)812-814
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

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Thin film transistors
Temperature
Electric potential
Threshold voltage
Lighting

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Son, K. S., Jung, J. S., Lee, K. H., Kim, T. S., Park, J. S., Park, K., ... Lee, S. Y. (2010). Highly stable double-gate Ga-In-Zn-O thin-film transistor. IEEE Electron Device Letters, 31(8), 812-814. [5491056]. https://doi.org/10.1109/LED.2010.2050294
Son, Kyoung Seok ; Jung, Ji Sim ; Lee, Kwang Hee ; Kim, Tae Sang ; Park, Joon Seok ; Park, Keechan ; Kwon, Jang Yeon ; Koo, Bonwon ; Lee, Sang Yoon. / Highly stable double-gate Ga-In-Zn-O thin-film transistor. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 8. pp. 812-814.
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Son, KS, Jung, JS, Lee, KH, Kim, TS, Park, JS, Park, K, Kwon, JY, Koo, B & Lee, SY 2010, 'Highly stable double-gate Ga-In-Zn-O thin-film transistor', IEEE Electron Device Letters, vol. 31, no. 8, 5491056, pp. 812-814. https://doi.org/10.1109/LED.2010.2050294

Highly stable double-gate Ga-In-Zn-O thin-film transistor. / Son, Kyoung Seok; Jung, Ji Sim; Lee, Kwang Hee; Kim, Tae Sang; Park, Joon Seok; Park, Keechan; Kwon, Jang Yeon; Koo, Bonwon; Lee, Sang Yoon.

In: IEEE Electron Device Letters, Vol. 31, No. 8, 5491056, 01.08.2010, p. 812-814.

Research output: Contribution to journalArticle

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Son KS, Jung JS, Lee KH, Kim TS, Park JS, Park K et al. Highly stable double-gate Ga-In-Zn-O thin-film transistor. IEEE Electron Device Letters. 2010 Aug 1;31(8):812-814. 5491056. https://doi.org/10.1109/LED.2010.2050294