We report the electrical stability of double-gate (DG) Ga-In-Zn-O thin-film transistors (TFTs). The threshold voltage (VT) shift of the DG TFT after 3 h of positivebias temperature stress (VGS = +20 V, V DS = +0.1 V, and Temperature = 60 °C) is as small as +2.7 V, while that of a conventional single-gate (SG) TFT is +6.6 V. The results of negative-bias temperature stress [(NBTS); VGS =.20 V, VDS = +10 V, and Temperature = 60 °C] are more dramatic: The VT shift of the DG TFT is only +0.1 V, whereas that of the SG TFT is.9.1 V. With backlight illumination, the VT shift of the SG TFT under the same NBTS becomes severe (.11.1 V). However, it remains as small as.0.7 V for the DG TFT.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering