Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

Tae Sung Kang, Tae Yoon Kim, Gyu Min Lee, Hyun Chul Sohn, Jin Pyo Hong

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Amorphous metal oxide thin film transistors (TFTs) are expected to serve as building blocks in a variety of devices, such as bendable displays, transparent mobile phones, and plastic newspapers. Here, we report a simple approach for highly stable solution-based zinc oxide (ZnO) TFTs by simply evaporating Al on the back channel layer without any additional chemical or plasma process for passivation. In particular, control and manipulation of Al nanoparticle (NP) formation represents one of the key approaches in this work. The possible sketch of the improved nature is proposed, along with various structural and electrical analyses.

Original languageEnglish
Pages (from-to)1390-1395
Number of pages6
JournalJournal of Materials Chemistry C
Volume2
Issue number8
DOIs
Publication statusPublished - 2014 Feb 28

Fingerprint

Zinc Oxide
Thin film transistors
Zinc oxide
Oxide films
Evaporation
Mobile phones
Passivation
Metals
Display devices
Plastics
Nanoparticles
Plasmas

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Kang, Tae Sung ; Kim, Tae Yoon ; Lee, Gyu Min ; Sohn, Hyun Chul ; Hong, Jin Pyo. / Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 8. pp. 1390-1395.
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Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process. / Kang, Tae Sung; Kim, Tae Yoon; Lee, Gyu Min; Sohn, Hyun Chul; Hong, Jin Pyo.

In: Journal of Materials Chemistry C, Vol. 2, No. 8, 28.02.2014, p. 1390-1395.

Research output: Contribution to journalArticle

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