Highly tunable charge transport in layer-by-layer assembled graphene transistors

Hyunmin Hwang, Piljae Joo, Moon Sung Kang, Gukmoon Ahn, Joong Tark Han, Byeong-Su Kim, Jeong Ho Cho

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

We demonstrate a controlled, systematic method to tune the charge transport in graphene field-effect transistors based on alternating layer-by-layer assembly of positively and negatively charged graphene oxide followed by thermal reduction. Surprisingly, tuning the number of bilayers of thermally reduced graphene oxide multilayer films allowed achieving either ambipolar or unipolar (both n- and p-type) transport in graphene transistors. On the basis of X-ray photoemission spectroscopy, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and temperature-dependent charge transport measurements, we found that nitrogen atoms from the functional groups of positively charged graphene oxide are incorporated into the reduced graphene oxide films and substitute carbon atoms during the thermal reduction. This nitrogen-doping process occurs in different degrees for graphene multilayers with varying numbers of bilayers and thereby results in the interesting transition in the electrical behavior in graphene multilayer transistors. We believe that such a versatile method to control the charge transport in graphene multilayers will further promote their applications in solution-processable electronic devices based on graphene.

Original languageEnglish
Pages (from-to)2432-2440
Number of pages9
JournalACS Nano
Volume6
Issue number3
DOIs
Publication statusPublished - 2012 Mar 27

Fingerprint

Graphite
Graphene
Charge transfer
graphene
transistors
Multilayers
Oxides
Oxide films
Nitrogen
oxides
Graphene transistors
Atoms
Multilayer films
Photoelectron spectroscopy
Secondary ion mass spectrometry
Field effect transistors
X ray spectroscopy
Functional groups
Raman spectroscopy
nitrogen atoms

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Hwang, Hyunmin ; Joo, Piljae ; Kang, Moon Sung ; Ahn, Gukmoon ; Han, Joong Tark ; Kim, Byeong-Su ; Cho, Jeong Ho. / Highly tunable charge transport in layer-by-layer assembled graphene transistors. In: ACS Nano. 2012 ; Vol. 6, No. 3. pp. 2432-2440.
@article{0c6c60e7d9e949c08836cdfc5a007ac8,
title = "Highly tunable charge transport in layer-by-layer assembled graphene transistors",
abstract = "We demonstrate a controlled, systematic method to tune the charge transport in graphene field-effect transistors based on alternating layer-by-layer assembly of positively and negatively charged graphene oxide followed by thermal reduction. Surprisingly, tuning the number of bilayers of thermally reduced graphene oxide multilayer films allowed achieving either ambipolar or unipolar (both n- and p-type) transport in graphene transistors. On the basis of X-ray photoemission spectroscopy, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and temperature-dependent charge transport measurements, we found that nitrogen atoms from the functional groups of positively charged graphene oxide are incorporated into the reduced graphene oxide films and substitute carbon atoms during the thermal reduction. This nitrogen-doping process occurs in different degrees for graphene multilayers with varying numbers of bilayers and thereby results in the interesting transition in the electrical behavior in graphene multilayer transistors. We believe that such a versatile method to control the charge transport in graphene multilayers will further promote their applications in solution-processable electronic devices based on graphene.",
author = "Hyunmin Hwang and Piljae Joo and Kang, {Moon Sung} and Gukmoon Ahn and Han, {Joong Tark} and Byeong-Su Kim and Cho, {Jeong Ho}",
year = "2012",
month = "3",
day = "27",
doi = "10.1021/nn2047197",
language = "English",
volume = "6",
pages = "2432--2440",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "3",

}

Highly tunable charge transport in layer-by-layer assembled graphene transistors. / Hwang, Hyunmin; Joo, Piljae; Kang, Moon Sung; Ahn, Gukmoon; Han, Joong Tark; Kim, Byeong-Su; Cho, Jeong Ho.

In: ACS Nano, Vol. 6, No. 3, 27.03.2012, p. 2432-2440.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Highly tunable charge transport in layer-by-layer assembled graphene transistors

AU - Hwang, Hyunmin

AU - Joo, Piljae

AU - Kang, Moon Sung

AU - Ahn, Gukmoon

AU - Han, Joong Tark

AU - Kim, Byeong-Su

AU - Cho, Jeong Ho

PY - 2012/3/27

Y1 - 2012/3/27

N2 - We demonstrate a controlled, systematic method to tune the charge transport in graphene field-effect transistors based on alternating layer-by-layer assembly of positively and negatively charged graphene oxide followed by thermal reduction. Surprisingly, tuning the number of bilayers of thermally reduced graphene oxide multilayer films allowed achieving either ambipolar or unipolar (both n- and p-type) transport in graphene transistors. On the basis of X-ray photoemission spectroscopy, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and temperature-dependent charge transport measurements, we found that nitrogen atoms from the functional groups of positively charged graphene oxide are incorporated into the reduced graphene oxide films and substitute carbon atoms during the thermal reduction. This nitrogen-doping process occurs in different degrees for graphene multilayers with varying numbers of bilayers and thereby results in the interesting transition in the electrical behavior in graphene multilayer transistors. We believe that such a versatile method to control the charge transport in graphene multilayers will further promote their applications in solution-processable electronic devices based on graphene.

AB - We demonstrate a controlled, systematic method to tune the charge transport in graphene field-effect transistors based on alternating layer-by-layer assembly of positively and negatively charged graphene oxide followed by thermal reduction. Surprisingly, tuning the number of bilayers of thermally reduced graphene oxide multilayer films allowed achieving either ambipolar or unipolar (both n- and p-type) transport in graphene transistors. On the basis of X-ray photoemission spectroscopy, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and temperature-dependent charge transport measurements, we found that nitrogen atoms from the functional groups of positively charged graphene oxide are incorporated into the reduced graphene oxide films and substitute carbon atoms during the thermal reduction. This nitrogen-doping process occurs in different degrees for graphene multilayers with varying numbers of bilayers and thereby results in the interesting transition in the electrical behavior in graphene multilayer transistors. We believe that such a versatile method to control the charge transport in graphene multilayers will further promote their applications in solution-processable electronic devices based on graphene.

UR - http://www.scopus.com/inward/record.url?scp=84859111661&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859111661&partnerID=8YFLogxK

U2 - 10.1021/nn2047197

DO - 10.1021/nn2047197

M3 - Article

VL - 6

SP - 2432

EP - 2440

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 3

ER -