Hole injection layer by ion beam assisted deposition for organic electroluminescence devices

Hun Choi Sang, Moon Jeong Soon, Hoe Koo Won, Hong Koo Baik

Research output: Contribution to journalConference article

Abstract

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted deposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

Original languageEnglish
Pages (from-to)1619-1622
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2
Publication statusPublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

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Ion beam assisted deposition
Electroluminescence
Tin oxides
Indium
Anodes
Adatoms
Thermal evaporation
Quantum efficiency
Ion beams
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted deposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.",
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Hole injection layer by ion beam assisted deposition for organic electroluminescence devices. / Sang, Hun Choi; Soon, Moon Jeong; Won, Hoe Koo; Baik, Hong Koo.

In: Proceedings of International Meeting on Information Display, Vol. 2, 01.12.2006, p. 1619-1622.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Hole injection layer by ion beam assisted deposition for organic electroluminescence devices

AU - Sang, Hun Choi

AU - Soon, Moon Jeong

AU - Won, Hoe Koo

AU - Baik, Hong Koo

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted deposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

AB - The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted deposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

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