Abstract
The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted deposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.
| Original language | English |
|---|---|
| Pages (from-to) | 1619-1622 |
| Number of pages | 4 |
| Journal | Proceedings of International Meeting on Information Display |
| Volume | 2 |
| Publication status | Published - 2006 |
| Event | 5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 2005 Jul 19 → 2005 Jul 23 |
All Science Journal Classification (ASJC) codes
- Engineering(all)