Hole-Mediated Ferromagnetic Properties in Zn1-xMnxO Thin Films

Sang Wook Lim, Min Chang Jeong, Moon Ho Ham, Jae Min Myoung

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

We report on the room-temperature hole-mediated ferromagnetism in Zn 1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temperature.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number2 B
Publication statusPublished - 2004 Feb 15

Fingerprint

Thin films
Substrates
thin films
Ferromagnetism
SQUIDs
room temperature
Magnetometers
Temperature
magnetometers
ferromagnetism
interference
gradients

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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abstract = "We report on the room-temperature hole-mediated ferromagnetism in Zn 1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temperature.",
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Hole-Mediated Ferromagnetic Properties in Zn1-xMnxO Thin Films. / Lim, Sang Wook; Jeong, Min Chang; Ham, Moon Ho; Myoung, Jae Min.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 2 B, 15.02.2004.

Research output: Contribution to journalArticle

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AU - Ham, Moon Ho

AU - Myoung, Jae Min

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AB - We report on the room-temperature hole-mediated ferromagnetism in Zn 1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temperature.

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