Abstract
Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.
| Original language | English |
|---|---|
| Pages (from-to) | 4640-4642 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2002 Dec 9 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Choo, M. H., Kim, J. H., & Im, S. (2002). Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors. Applied Physics Letters, 81(24), 4640-4642. https://doi.org/10.1063/1.1527993