Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

M. H. Choo; Jae Hoon Kim; Seongil Im

doi:10.1063/1.1527993

Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

M. H. Choo, Jae Hoon Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm²/V s, and the on/off current ratio of 10⁵ were obtained at deposition rate of 5 Å/s at RT.

Original language	English
Pages (from-to)	4640-4642
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	24
DOIs	https://doi.org/10.1063/1.1527993
Publication status	Published - 2002 Dec 9

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1527993

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abstract = "Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 {\AA}/s at 25°C (RT), and 7 {\AA}/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 {\AA}/s at RT.",

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N2 - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.

AB - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.

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