Abstract
Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.
| Original language | English |
|---|---|
| Pages (from-to) | 4640-4642 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2002 Dec 9 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors. / Choo, M. H.; Kim, Jae Hoon; Im, Seongil.
In: Applied Physics Letters, Vol. 81, No. 24, 09.12.2002, p. 4640-4642.Research output: Contribution to journal › Article
TY - JOUR
T1 - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors
AU - Choo, M. H.
AU - Kim, Jae Hoon
AU - Im, Seongil
PY - 2002/12/9
Y1 - 2002/12/9
N2 - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.
AB - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.
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U2 - 10.1063/1.1527993
DO - 10.1063/1.1527993
M3 - Article
AN - SCOPUS:0037049674
VL - 81
SP - 4640
EP - 4642
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
ER -