Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

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Abstract

Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.

Original languageEnglish
Pages (from-to)4640-4642
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number24
DOIs
Publication statusPublished - 2002 Dec 9

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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