Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

M. H. Choo; Jae Hoon Kim; Seongil Im

doi:10.1063/1.1527993

Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

M. H. Choo, Jae Hoon Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article

34 Citations (Scopus)

Abstract

Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm²/V s, and the on/off current ratio of 10⁵ were obtained at deposition rate of 5 Å/s at RT.

Original language	English
Pages (from-to)	4640-4642
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	24
DOIs	https://doi.org/10.1063/1.1527993
Publication status	Published - 2002 Dec 9

Fingerprint

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Choo, M. H., Kim, J. H., & Im, S. (2002). Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors. Applied Physics Letters, 81(24), 4640-4642. https://doi.org/10.1063/1.1527993

@article{6a789562a4c2446cb22aa948a95ead2a,

title = "Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors",

abstract = "Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 {\AA}/s at 25°C (RT), and 7 {\AA}/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 {\AA}/s at RT.",

author = "Choo, {M. H.} and Kim, {Jae Hoon} and Seongil Im",

year = "2002",

month = dec

day = "9",

doi = "10.1063/1.1527993",

language = "English",

volume = "81",

pages = "4640--4642",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

AU - Choo, M. H.

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2002/12/9

Y1 - 2002/12/9

N2 - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.

AB - Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors was discussed. Five organic thin-film transistors were prepared by evaporating the pentacene films at rates of 1, 3, 5, and 7 Å/s at 25°C (RT), and 7 Å/s at 60°C. A saturation current of about 4 μA at gate bias of -40 V, the field-effect mobility of 0.1 cm2/V s, and the on/off current ratio of 105 were obtained at deposition rate of 5 Å/s at RT.

UR - http://www.scopus.com/inward/record.url?scp=0037049674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037049674&partnerID=8YFLogxK

U2 - 10.1063/1.1527993

DO - 10.1063/1.1527993

M3 - Article

AN - SCOPUS:0037049674

VL - 81

SP - 4640

EP - 4642

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -

Access to Document

10.1063/1.1527993