Homoepitaxial and heteroepitaxial growth of Sr0.61Ba0.39Nb2O6 thin films by pulsed laser deposition

J. S. Yeo, K. E. Youden, T. F. Huang, L. Hesselink, J. S. Harris

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Epitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume401
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: 1995 Nov 271995 Nov 30

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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