TY - JOUR
T1 - Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy
AU - Ogata, K.
AU - Kawanishi, T.
AU - Sakurai, K.
AU - Kim, S. W.
AU - Maejima, K.
AU - Fujita, Sz
AU - Fujita, Sg
PY - 2002
Y1 - 2002
N2 - Homoepitaxial technique of metalorganic vapor phase epitaxy (MOVPE) was used for the growth of high quality epitaxial ZnO layers, Two conditions, proper thermal treatment of substrate prior to the growth for obtaining flat surface and high flow rate ratios of source materials, nitrous oxide (N2O) and diethylzinc (DEZn), were found to be important. Surface roughness below 1 nm as well as strong free exciton emission at 15 K of an MOVPE-ZnO layer on a bulk ZnO substrate have demonstrated the high potential of MOVPE for ZnO.
AB - Homoepitaxial technique of metalorganic vapor phase epitaxy (MOVPE) was used for the growth of high quality epitaxial ZnO layers, Two conditions, proper thermal treatment of substrate prior to the growth for obtaining flat surface and high flow rate ratios of source materials, nitrous oxide (N2O) and diethylzinc (DEZn), were found to be important. Surface roughness below 1 nm as well as strong free exciton emission at 15 K of an MOVPE-ZnO layer on a bulk ZnO substrate have demonstrated the high potential of MOVPE for ZnO.
UR - http://www.scopus.com/inward/record.url?scp=0036002002&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036002002&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(200201)229:2<915::AID-PSSB915>3.0.CO;2-B
DO - 10.1002/1521-3951(200201)229:2<915::AID-PSSB915>3.0.CO;2-B
M3 - Article
AN - SCOPUS:0036002002
SN - 0370-1972
VL - 229
SP - 915
EP - 919
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 2
ER -