Homogeneity and tolerance to heat of monolayer MoS2 on SiO2 and h-BN

Ho Jong Kim, Daehee Kim, Suyong Jung, Myung Ho Bae, Sam Nyung Yi, Kenji Watanabe, Takashi Taniguchi, Soo Kyung Chang, Dong Han Ha

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the homogeneity and tolerance to heat of monolayer MoS2 using photoluminescence (PL) spectroscopy. For MoS2 on SiO2, the PL spectra of the basal plane differ from those of the edge, but MoS2 on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS2 on SiO2 homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS2 monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS2 on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS2 on SiO2. We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS2 to heat on the basis of interlayer/interfacial binding energy.

Original languageEnglish
Pages (from-to)12900-12906
Number of pages7
JournalRSC Advances
Volume8
Issue number23
DOIs
Publication statusPublished - 2018 Jan 1

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Boron nitride
Monolayers
Photoluminescence
Binding energy
Annealing
Photoluminescence spectroscopy
Electrons
Laser beam effects
Crystal structure
Defects
Hot Temperature
boron nitride
Experiments

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Kim, H. J., Kim, D., Jung, S., Bae, M. H., Yi, S. N., Watanabe, K., ... Ha, D. H. (2018). Homogeneity and tolerance to heat of monolayer MoS2 on SiO2 and h-BN. RSC Advances, 8(23), 12900-12906. https://doi.org/10.1039/c8ra01849a
Kim, Ho Jong ; Kim, Daehee ; Jung, Suyong ; Bae, Myung Ho ; Yi, Sam Nyung ; Watanabe, Kenji ; Taniguchi, Takashi ; Chang, Soo Kyung ; Ha, Dong Han. / Homogeneity and tolerance to heat of monolayer MoS2 on SiO2 and h-BN. In: RSC Advances. 2018 ; Vol. 8, No. 23. pp. 12900-12906.
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Kim, HJ, Kim, D, Jung, S, Bae, MH, Yi, SN, Watanabe, K, Taniguchi, T, Chang, SK & Ha, DH 2018, 'Homogeneity and tolerance to heat of monolayer MoS2 on SiO2 and h-BN', RSC Advances, vol. 8, no. 23, pp. 12900-12906. https://doi.org/10.1039/c8ra01849a

Homogeneity and tolerance to heat of monolayer MoS2 on SiO2 and h-BN. / Kim, Ho Jong; Kim, Daehee; Jung, Suyong; Bae, Myung Ho; Yi, Sam Nyung; Watanabe, Kenji; Taniguchi, Takashi; Chang, Soo Kyung; Ha, Dong Han.

In: RSC Advances, Vol. 8, No. 23, 01.01.2018, p. 12900-12906.

Research output: Contribution to journalArticle

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AU - Chang, Soo Kyung

AU - Ha, Dong Han

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Kim HJ, Kim D, Jung S, Bae MH, Yi SN, Watanabe K et al. Homogeneity and tolerance to heat of monolayer MoS2 on SiO2 and h-BN. RSC Advances. 2018 Jan 1;8(23):12900-12906. https://doi.org/10.1039/c8ra01849a