Recently, α-MoTe2, a 2D transition-metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α-MoTe2 a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α-MoTe2 appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge-carrier polarity of MoTe2, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α-MoTe2 nanosheet by a straightforward selective doping technique. In a single α-MoTe2 flake, an initially p-doped channel is selectively converted to an n-doped region with high electron mobility of 18 cm2 V−1 s−1 by atomic-layer-deposition-induced H-doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α-MoTe2 for future electronic devices based on 2D semiconducting materials.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant Nos. 2014R1A2A1A01004815, 2011?0018306, new SRC program: vdWMRC center), and the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168). J.Y.L acknowledges the tuition support from the Hyundai Motor Chung Mong-Koo Foundation. Computational resources have been provided by KISTI Supercomputing Center (Project No. KSC-2016-C3-0052). Note: The acknowledgements were updated on August 11, 2017, after initial online publication.
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering