Homogeneous ZnO p-n junction formed by continuous atomic layer deposition process

Kyung Mun Kang; Chan Lee; Minjae Kim; Haryeong Choi; Dong eun Kim; Seung Rok Kim; Jin Woo Park; Hyung Ho Park

doi:10.1016/j.jallcom.2022.166694

Homogeneous ZnO p-n junction formed by continuous atomic layer deposition process

Kyung Mun Kang, Chan Lee, Minjae Kim, Haryeong Choi, Dong eun Kim, Seung Rok Kim, Jin Woo Park, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication of electronic devices based on zinc oxide (ZnO) for various applications requires a stable and reproducible p-type nanostructure. Herein, a stable atomic layer deposition process is established, and N and F codoped p-type ZnO (NFZO) thin films are deposited on silicon, glass, and polyethylene terephthalate substrates, and Hall effect measurements demonstrate the p-type conductivity with a resistivity of 0.208 Ω∙cm, a carrier concentration of 1.84 × 10¹⁸ cm^–3 and a mobility of 16.27 cm²∙V^–1∙s^–1. In addition, the I-V characteristics of a homogeneous and coherent p-n junction consisting of the p-type NFZO and a previously-developed n-type ZnO clearly demonstrate the rectifying nature. Moreover, the potential application of the fabricated light-emitting device in optoelectronics is demonstrated by electroluminescence analysis, with significant emission in the blue region. Finally, the piezoelectric screening effect that compromises the output performance of the piezoelectric nanogenerator is prevented by using the as-developed p-type NFZO.

Original language	English
Article number	166694
Journal	Journal of Alloys and Compounds
Volume	925
DOIs	https://doi.org/10.1016/j.jallcom.2022.166694
Publication status	Published - 2022 Dec 5

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT). (No. 2019R1A2C2087604). This research was also supported by the Creative Materials Discovery Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT(2018M3D1A1058536). MEST and POSTECH supported the experiments at PLS. The authors declare that they have no competing financial interests.

Funding Information:
This work was supported by a National Research Foundation of Korea(NRF) grant funded by the Korea government( MSIT ). (No. 2019R1A2C2087604 ). This research was also supported by the Creative Materials Discovery Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT ( 2018M3D1A1058536 ). MEST and POSTECH supported the experiments at PLS.

Publisher Copyright:
© 2022 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2022.166694

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@article{10fa47d2f2824071aac61425f0e0808c,

title = "Homogeneous ZnO p-n junction formed by continuous atomic layer deposition process",

abstract = "The fabrication of electronic devices based on zinc oxide (ZnO) for various applications requires a stable and reproducible p-type nanostructure. Herein, a stable atomic layer deposition process is established, and N and F codoped p-type ZnO (NFZO) thin films are deposited on silicon, glass, and polyethylene terephthalate substrates, and Hall effect measurements demonstrate the p-type conductivity with a resistivity of 0.208 Ω∙cm, a carrier concentration of 1.84 × 1018 cm–3 and a mobility of 16.27 cm2∙V–1∙s–1. In addition, the I-V characteristics of a homogeneous and coherent p-n junction consisting of the p-type NFZO and a previously-developed n-type ZnO clearly demonstrate the rectifying nature. Moreover, the potential application of the fabricated light-emitting device in optoelectronics is demonstrated by electroluminescence analysis, with significant emission in the blue region. Finally, the piezoelectric screening effect that compromises the output performance of the piezoelectric nanogenerator is prevented by using the as-developed p-type NFZO.",

author = "Kang, {Kyung Mun} and Chan Lee and Minjae Kim and Haryeong Choi and Kim, {Dong eun} and Kim, {Seung Rok} and Park, {Jin Woo} and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT). (No. 2019R1A2C2087604). This research was also supported by the Creative Materials Discovery Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT(2018M3D1A1058536). MEST and POSTECH supported the experiments at PLS. The authors declare that they have no competing financial interests. Funding Information: This work was supported by a National Research Foundation of Korea(NRF) grant funded by the Korea government( MSIT ). (No. 2019R1A2C2087604 ). This research was also supported by the Creative Materials Discovery Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT ( 2018M3D1A1058536 ). MEST and POSTECH supported the experiments at PLS. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

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doi = "10.1016/j.jallcom.2022.166694",

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AU - Kang, Kyung Mun

AU - Lee, Chan

AU - Kim, Minjae

AU - Choi, Haryeong

AU - Kim, Dong eun

AU - Kim, Seung Rok

AU - Park, Jin Woo

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by a National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT). (No. 2019R1A2C2087604). This research was also supported by the Creative Materials Discovery Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT(2018M3D1A1058536). MEST and POSTECH supported the experiments at PLS. The authors declare that they have no competing financial interests. Funding Information: This work was supported by a National Research Foundation of Korea(NRF) grant funded by the Korea government( MSIT ). (No. 2019R1A2C2087604 ). This research was also supported by the Creative Materials Discovery Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT ( 2018M3D1A1058536 ). MEST and POSTECH supported the experiments at PLS. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/12/5

Y1 - 2022/12/5

N2 - The fabrication of electronic devices based on zinc oxide (ZnO) for various applications requires a stable and reproducible p-type nanostructure. Herein, a stable atomic layer deposition process is established, and N and F codoped p-type ZnO (NFZO) thin films are deposited on silicon, glass, and polyethylene terephthalate substrates, and Hall effect measurements demonstrate the p-type conductivity with a resistivity of 0.208 Ω∙cm, a carrier concentration of 1.84 × 1018 cm–3 and a mobility of 16.27 cm2∙V–1∙s–1. In addition, the I-V characteristics of a homogeneous and coherent p-n junction consisting of the p-type NFZO and a previously-developed n-type ZnO clearly demonstrate the rectifying nature. Moreover, the potential application of the fabricated light-emitting device in optoelectronics is demonstrated by electroluminescence analysis, with significant emission in the blue region. Finally, the piezoelectric screening effect that compromises the output performance of the piezoelectric nanogenerator is prevented by using the as-developed p-type NFZO.

AB - The fabrication of electronic devices based on zinc oxide (ZnO) for various applications requires a stable and reproducible p-type nanostructure. Herein, a stable atomic layer deposition process is established, and N and F codoped p-type ZnO (NFZO) thin films are deposited on silicon, glass, and polyethylene terephthalate substrates, and Hall effect measurements demonstrate the p-type conductivity with a resistivity of 0.208 Ω∙cm, a carrier concentration of 1.84 × 1018 cm–3 and a mobility of 16.27 cm2∙V–1∙s–1. In addition, the I-V characteristics of a homogeneous and coherent p-n junction consisting of the p-type NFZO and a previously-developed n-type ZnO clearly demonstrate the rectifying nature. Moreover, the potential application of the fabricated light-emitting device in optoelectronics is demonstrated by electroluminescence analysis, with significant emission in the blue region. Finally, the piezoelectric screening effect that compromises the output performance of the piezoelectric nanogenerator is prevented by using the as-developed p-type NFZO.

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Homogeneous ZnO p-n junction formed by continuous atomic layer deposition process

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