Homojunction indium–gallium–zinc oxide thin-film transistors by selective simultaneous uv and thermal treatment

Hyung Tae Kim; Hyukjoon Yoo; Jeong Woo Park; Won Gi Kim; Dong Hyun Choi; Hyun Jae Kim

doi:10.1002/sdtp.14139

Homojunction indium–gallium–zinc oxide thin-film transistors by selective simultaneous uv and thermal treatment

Hyung Tae Kim, Hyukjoon Yoo, Jeong Woo Park, Won Gi Kim, Dong Hyun Choi, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Indium–gallium–zinc oxide (IGZO) based thin-film transistors (TFTs) are fabricated via selective simultaneous UV and thermal treatment (SSUT). SSUT is one-step deposition process with activation and patterning for an active layer region of homojunction IGZO TFTs. As a result, the IGZO TFTs via SSUT showed the improved electrical characteristics.

Original language	English
Pages (from-to)	1369-1371
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	51
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.14139
Publication status	Published - 2020
Event	57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online Duration: 2020 Aug 3 → 2020 Aug 7

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Evaluation Industrial Technology (KEIT) through the Industrial Strategic Technology Development Program (No. 10079571) and Samsung Display.

Publisher Copyright:
© 2020 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.14139

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@article{3f6998e95923478da81e74b19b0f83e4,

title = "Homojunction indium–gallium–zinc oxide thin-film transistors by selective simultaneous uv and thermal treatment",

abstract = "Indium–gallium–zinc oxide (IGZO) based thin-film transistors (TFTs) are fabricated via selective simultaneous UV and thermal treatment (SSUT). SSUT is one-step deposition process with activation and patterning for an active layer region of homojunction IGZO TFTs. As a result, the IGZO TFTs via SSUT showed the improved electrical characteristics.",

author = "Kim, {Hyung Tae} and Hyukjoon Yoo and Park, {Jeong Woo} and Kim, {Won Gi} and Choi, {Dong Hyun} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Evaluation Industrial Technology (KEIT) through the Industrial Strategic Technology Development Program (No. 10079571) and Samsung Display. Publisher Copyright: {\textcopyright} 2020 SID.; 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 ; Conference date: 03-08-2020 Through 07-08-2020",

year = "2020",

doi = "10.1002/sdtp.14139",

language = "English",

volume = "51",

pages = "1369--1371",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

}

TY - JOUR

T1 - Homojunction indium–gallium–zinc oxide thin-film transistors by selective simultaneous uv and thermal treatment

AU - Kim, Hyung Tae

AU - Yoo, Hyukjoon

AU - Park, Jeong Woo

AU - Kim, Won Gi

AU - Choi, Dong Hyun

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Evaluation Industrial Technology (KEIT) through the Industrial Strategic Technology Development Program (No. 10079571) and Samsung Display. Publisher Copyright: © 2020 SID.

PY - 2020

Y1 - 2020

N2 - Indium–gallium–zinc oxide (IGZO) based thin-film transistors (TFTs) are fabricated via selective simultaneous UV and thermal treatment (SSUT). SSUT is one-step deposition process with activation and patterning for an active layer region of homojunction IGZO TFTs. As a result, the IGZO TFTs via SSUT showed the improved electrical characteristics.

AB - Indium–gallium–zinc oxide (IGZO) based thin-film transistors (TFTs) are fabricated via selective simultaneous UV and thermal treatment (SSUT). SSUT is one-step deposition process with activation and patterning for an active layer region of homojunction IGZO TFTs. As a result, the IGZO TFTs via SSUT showed the improved electrical characteristics.

UR - http://www.scopus.com/inward/record.url?scp=85094186732&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85094186732&partnerID=8YFLogxK

U2 - 10.1002/sdtp.14139

DO - 10.1002/sdtp.14139

M3 - Conference article

AN - SCOPUS:85094186732

SN - 0097-966X

VL - 51

SP - 1369

EP - 1371

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020

Y2 - 3 August 2020 through 7 August 2020

ER -

Homojunction indium–gallium–zinc oxide thin-film transistors by selective simultaneous uv and thermal treatment

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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