Indium–gallium–zinc oxide (IGZO) based thin-film transistors (TFTs) are fabricated via selective simultaneous UV and thermal treatment (SSUT). SSUT is one-step deposition process with activation and patterning for an active layer region of homojunction IGZO TFTs. As a result, the IGZO TFTs via SSUT showed the improved electrical characteristics.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2020|
|Event||57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online|
Duration: 2020 Aug 3 → 2020 Aug 7
Bibliographical noteFunding Information:
This work was supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Evaluation Industrial Technology (KEIT) through the Industrial Strategic Technology Development Program (No. 10079571) and Samsung Display.
© 2020 SID.
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