Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition

Jung Hyun Kim, You Seung Rim, Hyun Jae Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlO x layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlO x/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm2/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10 6 with a width/length (W/L) of 2000 μm/400 μm.

Original languageEnglish
Pages (from-to)4819-4822
Number of pages4
JournalACS Applied Materials and Interfaces
Volume6
Issue number7
DOIs
Publication statusPublished - 2014 Apr 9

Fingerprint

Thin film transistors
Passivation
Indium
Oxide films
Metals
Thin films
Oxides
indium oxide
Aluminum Oxide
Oxygen vacancies
Photoresists
Threshold voltage
Carrier concentration
Annealing
Aluminum
Electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlO x layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlO x/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm2/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10 6 with a width/length (W/L) of 2000 μm/400 μm.",
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Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition. / Kim, Jung Hyun; Rim, You Seung; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 7, 09.04.2014, p. 4819-4822.

Research output: Contribution to journalArticle

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