Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition

Jung Hyun Kim, You Seung Rim, Hyun Jae Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlO x layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlO x/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm2/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10 6 with a width/length (W/L) of 2000 μm/400 μm.

Original languageEnglish
Pages (from-to)4819-4822
Number of pages4
JournalACS Applied Materials and Interfaces
Volume6
Issue number7
DOIs
Publication statusPublished - 2014 Apr 9

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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