Abstract
A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlO x layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlO x/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm2/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10 6 with a width/length (W/L) of 2000 μm/400 μm.
| Original language | English |
|---|---|
| Pages (from-to) | 4819-4822 |
| Number of pages | 4 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 6 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2014 Apr 9 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition. / Kim, Jung Hyun; Rim, You Seung; Kim, Hyun Jae.
In: ACS Applied Materials and Interfaces, Vol. 6, No. 7, 09.04.2014, p. 4819-4822.Research output: Contribution to journal › Article
TY - JOUR
T1 - Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition
AU - Kim, Jung Hyun
AU - Rim, You Seung
AU - Kim, Hyun Jae
PY - 2014/4/9
Y1 - 2014/4/9
N2 - A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlO x layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlO x/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm2/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10 6 with a width/length (W/L) of 2000 μm/400 μm.
AB - A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlO x layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlO x/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm2/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10 6 with a width/length (W/L) of 2000 μm/400 μm.
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U2 - 10.1021/am405712m
DO - 10.1021/am405712m
M3 - Article
VL - 6
SP - 4819
EP - 4822
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 7
ER -