Horizontal assembly of single nanowire diode fabricated by p-n junction GaN nw grown by MOCVD

Ji Hyeon Park, Suthan Kissinger, Yong Ho Ra, Kang San, Min Ji Park, Kyung Hwa Yoo, Cheul Ro Lee

Research output: Contribution to journalArticle

Abstract

Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111) substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a <0001> growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

Original languageEnglish
Article number951360
JournalJournal of Nanomaterials
Volume2014
DOIs
Publication statusPublished - 2014

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Metallorganic chemical vapor deposition
Nanowires
Diodes
Gallium nitride
Substrates
Organic Chemicals
Electrodes
Organic chemicals
Ultraviolet radiation
Chemical vapor deposition
Electric properties
Metals
Transmission electron microscopy
Wavelength
gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Park, Ji Hyeon ; Kissinger, Suthan ; Ra, Yong Ho ; San, Kang ; Park, Min Ji ; Yoo, Kyung Hwa ; Lee, Cheul Ro. / Horizontal assembly of single nanowire diode fabricated by p-n junction GaN nw grown by MOCVD. In: Journal of Nanomaterials. 2014 ; Vol. 2014.
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abstract = "Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111) substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a <0001> growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.",
author = "Park, {Ji Hyeon} and Suthan Kissinger and Ra, {Yong Ho} and Kang San and Park, {Min Ji} and Yoo, {Kyung Hwa} and Lee, {Cheul Ro}",
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Horizontal assembly of single nanowire diode fabricated by p-n junction GaN nw grown by MOCVD. / Park, Ji Hyeon; Kissinger, Suthan; Ra, Yong Ho; San, Kang; Park, Min Ji; Yoo, Kyung Hwa; Lee, Cheul Ro.

In: Journal of Nanomaterials, Vol. 2014, 951360, 2014.

Research output: Contribution to journalArticle

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AU - Park, Ji Hyeon

AU - Kissinger, Suthan

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AU - Park, Min Ji

AU - Yoo, Kyung Hwa

AU - Lee, Cheul Ro

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AB - Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111) substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a <0001> growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

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