Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature Chemical Vapor Deposition-Grown PtSe 2 and Its Influences on Electrical Properties and Device Applications

Sang Sub Han, Jong Hun Kim, Chanwoo Noh, Jung Han Kim, Eunji Ji, Junyoung Kwon, Seung Min Yu, Tae Jun Ko, Emmanuel Okogbue, Kyu Hwan Oh, Hee Suk Chung, Younjoon Jung, Gwan Hyoung Lee, Yeonwoong Jung

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX 2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide (2D PtSe 2 ) is a relatively unexplored class of 2D TMDs with noble-metal Pt as M, offering distinct advantages over conventional 2D TMDs such as higher carrier mobility and lower growth temperatures. Despite the projected promise, much of its fundamental structural and electrical properties and their interrelation have not been clarified, and so its full technological potential remains mostly unexplored. In this work, we investigate the structural evolution of large-area chemical vapor deposition (CVD)-grown 2D PtSe 2 layers of tailored morphology and clarify its influence on resulting electrical properties. Specifically, we unveil the coupled transition of structural-electrical properties in 2D PtSe 2 layers grown at a low temperature (i.e., 400 °C). The layer orientation of 2D PtSe 2 grown by the CVD selenization of seed Pt films exhibits horizontal-to-vertical transition with increasing Pt thickness. While vertically aligned 2D PtSe 2 layers present metallic transports, field-effect-transistor gate responses were observed with thin horizontally aligned 2D PtSe 2 layers prepared with Pt of small thickness. Density functional theory calculation identifies the electronic structures of 2D PtSe 2 layers undergoing the transition of horizontal-to-vertical layer orientation, further confirming the presence of this uniquely coupled structural-electrical transition. The advantage of low-temperature growth was further demonstrated by directly growing 2D PtSe 2 layers of controlled orientation on polyimide polymeric substrates and fabricating their Kirigami structures, further strengthening the application potential of this material. Discussions on the growth mechanism behind the horizontal-to-vertical 2D layer transition are also presented.

Original languageEnglish
Pages (from-to)13598-13607
Number of pages10
JournalACS Applied Materials and Interfaces
Volume11
Issue number14
DOIs
Publication statusPublished - 2019 Apr 10

Fingerprint

Transition metals
Chemical vapor deposition
Electric properties
Growth temperature
Chalcogens
Gates (transistor)
Temperature
Carrier mobility
Precious metals
Platinum
Polyimides
Electronic structure
Density functional theory
Seed
Structural properties
Materials properties
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Han, Sang Sub ; Kim, Jong Hun ; Noh, Chanwoo ; Kim, Jung Han ; Ji, Eunji ; Kwon, Junyoung ; Yu, Seung Min ; Ko, Tae Jun ; Okogbue, Emmanuel ; Oh, Kyu Hwan ; Chung, Hee Suk ; Jung, Younjoon ; Lee, Gwan Hyoung ; Jung, Yeonwoong. / Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature Chemical Vapor Deposition-Grown PtSe 2 and Its Influences on Electrical Properties and Device Applications In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 14. pp. 13598-13607.
@article{86eff460f68b40b7a6951ef05ac3702e,
title = "Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature Chemical Vapor Deposition-Grown PtSe 2 and Its Influences on Electrical Properties and Device Applications",
abstract = "Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX 2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide (2D PtSe 2 ) is a relatively unexplored class of 2D TMDs with noble-metal Pt as M, offering distinct advantages over conventional 2D TMDs such as higher carrier mobility and lower growth temperatures. Despite the projected promise, much of its fundamental structural and electrical properties and their interrelation have not been clarified, and so its full technological potential remains mostly unexplored. In this work, we investigate the structural evolution of large-area chemical vapor deposition (CVD)-grown 2D PtSe 2 layers of tailored morphology and clarify its influence on resulting electrical properties. Specifically, we unveil the coupled transition of structural-electrical properties in 2D PtSe 2 layers grown at a low temperature (i.e., 400 °C). The layer orientation of 2D PtSe 2 grown by the CVD selenization of seed Pt films exhibits horizontal-to-vertical transition with increasing Pt thickness. While vertically aligned 2D PtSe 2 layers present metallic transports, field-effect-transistor gate responses were observed with thin horizontally aligned 2D PtSe 2 layers prepared with Pt of small thickness. Density functional theory calculation identifies the electronic structures of 2D PtSe 2 layers undergoing the transition of horizontal-to-vertical layer orientation, further confirming the presence of this uniquely coupled structural-electrical transition. The advantage of low-temperature growth was further demonstrated by directly growing 2D PtSe 2 layers of controlled orientation on polyimide polymeric substrates and fabricating their Kirigami structures, further strengthening the application potential of this material. Discussions on the growth mechanism behind the horizontal-to-vertical 2D layer transition are also presented.",
author = "Han, {Sang Sub} and Kim, {Jong Hun} and Chanwoo Noh and Kim, {Jung Han} and Eunji Ji and Junyoung Kwon and Yu, {Seung Min} and Ko, {Tae Jun} and Emmanuel Okogbue and Oh, {Kyu Hwan} and Chung, {Hee Suk} and Younjoon Jung and Lee, {Gwan Hyoung} and Yeonwoong Jung",
year = "2019",
month = "4",
day = "10",
doi = "10.1021/acsami.9b01078",
language = "English",
volume = "11",
pages = "13598--13607",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "14",

}

Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature Chemical Vapor Deposition-Grown PtSe 2 and Its Influences on Electrical Properties and Device Applications . / Han, Sang Sub; Kim, Jong Hun; Noh, Chanwoo; Kim, Jung Han; Ji, Eunji; Kwon, Junyoung; Yu, Seung Min; Ko, Tae Jun; Okogbue, Emmanuel; Oh, Kyu Hwan; Chung, Hee Suk; Jung, Younjoon; Lee, Gwan Hyoung; Jung, Yeonwoong.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 14, 10.04.2019, p. 13598-13607.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature Chemical Vapor Deposition-Grown PtSe 2 and Its Influences on Electrical Properties and Device Applications

AU - Han, Sang Sub

AU - Kim, Jong Hun

AU - Noh, Chanwoo

AU - Kim, Jung Han

AU - Ji, Eunji

AU - Kwon, Junyoung

AU - Yu, Seung Min

AU - Ko, Tae Jun

AU - Okogbue, Emmanuel

AU - Oh, Kyu Hwan

AU - Chung, Hee Suk

AU - Jung, Younjoon

AU - Lee, Gwan Hyoung

AU - Jung, Yeonwoong

PY - 2019/4/10

Y1 - 2019/4/10

N2 - Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX 2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide (2D PtSe 2 ) is a relatively unexplored class of 2D TMDs with noble-metal Pt as M, offering distinct advantages over conventional 2D TMDs such as higher carrier mobility and lower growth temperatures. Despite the projected promise, much of its fundamental structural and electrical properties and their interrelation have not been clarified, and so its full technological potential remains mostly unexplored. In this work, we investigate the structural evolution of large-area chemical vapor deposition (CVD)-grown 2D PtSe 2 layers of tailored morphology and clarify its influence on resulting electrical properties. Specifically, we unveil the coupled transition of structural-electrical properties in 2D PtSe 2 layers grown at a low temperature (i.e., 400 °C). The layer orientation of 2D PtSe 2 grown by the CVD selenization of seed Pt films exhibits horizontal-to-vertical transition with increasing Pt thickness. While vertically aligned 2D PtSe 2 layers present metallic transports, field-effect-transistor gate responses were observed with thin horizontally aligned 2D PtSe 2 layers prepared with Pt of small thickness. Density functional theory calculation identifies the electronic structures of 2D PtSe 2 layers undergoing the transition of horizontal-to-vertical layer orientation, further confirming the presence of this uniquely coupled structural-electrical transition. The advantage of low-temperature growth was further demonstrated by directly growing 2D PtSe 2 layers of controlled orientation on polyimide polymeric substrates and fabricating their Kirigami structures, further strengthening the application potential of this material. Discussions on the growth mechanism behind the horizontal-to-vertical 2D layer transition are also presented.

AB - Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX 2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide (2D PtSe 2 ) is a relatively unexplored class of 2D TMDs with noble-metal Pt as M, offering distinct advantages over conventional 2D TMDs such as higher carrier mobility and lower growth temperatures. Despite the projected promise, much of its fundamental structural and electrical properties and their interrelation have not been clarified, and so its full technological potential remains mostly unexplored. In this work, we investigate the structural evolution of large-area chemical vapor deposition (CVD)-grown 2D PtSe 2 layers of tailored morphology and clarify its influence on resulting electrical properties. Specifically, we unveil the coupled transition of structural-electrical properties in 2D PtSe 2 layers grown at a low temperature (i.e., 400 °C). The layer orientation of 2D PtSe 2 grown by the CVD selenization of seed Pt films exhibits horizontal-to-vertical transition with increasing Pt thickness. While vertically aligned 2D PtSe 2 layers present metallic transports, field-effect-transistor gate responses were observed with thin horizontally aligned 2D PtSe 2 layers prepared with Pt of small thickness. Density functional theory calculation identifies the electronic structures of 2D PtSe 2 layers undergoing the transition of horizontal-to-vertical layer orientation, further confirming the presence of this uniquely coupled structural-electrical transition. The advantage of low-temperature growth was further demonstrated by directly growing 2D PtSe 2 layers of controlled orientation on polyimide polymeric substrates and fabricating their Kirigami structures, further strengthening the application potential of this material. Discussions on the growth mechanism behind the horizontal-to-vertical 2D layer transition are also presented.

UR - http://www.scopus.com/inward/record.url?scp=85063380151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063380151&partnerID=8YFLogxK

U2 - 10.1021/acsami.9b01078

DO - 10.1021/acsami.9b01078

M3 - Article

C2 - 30854845

AN - SCOPUS:85063380151

VL - 11

SP - 13598

EP - 13607

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 14

ER -