Hybrid current-mode class-s power amplifier with gan schottky diode using chip-on-board technique for 955 mhz lte signal

Jun Chul Park, Jong Gwan Yook, Bong Hyuk Park, Namcheol Jeon, Kwang Seok Seo, Dongsu Kim, Woo Sung Lee, Chan Sei Yoo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper presents a gallium nitride (GaN)-based hybrid current-mode class-S (CMCS) power amplifier (PA) using a bandpass delta-sigma modulator (BPDSM) for a 955-MHz LTE signal. To enhance the drain efficiency of the CMCS PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. Also, GaN Schottky barrier diodes are fabricated in-house to protect the switching transistor against the high negative voltage swing. The differential output filter and balun composed of lumped LC resonators are integrated at the back of the switching transistor to extract amplified LTE signal from the output rectangular waveform, and the fabricated CMCS PA is measured and analyzed at four different states of BPDSM according to the coding efficiency from different input power level to obtain higher power and efficiency. Finally, a cavity bandpass filter (BPF) is added to the output circuit for a more accurate reduction of the harmonics and out-of-band noise signals to enhance system efficiency. From the measured results for an 8.5-dB PAPR 3 G LTE 10-MHz input signal, the proposed CMCS PA has a maximum average output power of 37.61 and 30.78 dBm, and the resulting drain efficiencies of 33.3% and 38.6% with the drain voltage of 19 and 7 V, respectively.

Original languageEnglish
Article number6665160
Pages (from-to)4168-4178
Number of pages11
JournalIEEE Transactions on Microwave Theory and Techniques
Volume61
Issue number12
DOIs
Publication statusPublished - 2013 Dec 1

Fingerprint

power amplifiers
Schottky diodes
Power amplifiers
Printed circuit boards
Diodes
chips
local thermodynamic equilibrium
Gallium nitride
Transistors
transistors
output
gallium nitrides
Modulators
modulators
waveforms
Schottky barrier diodes
Electric potential
electric potential
Bandpass filters
bandpass filters

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Park, Jun Chul ; Yook, Jong Gwan ; Park, Bong Hyuk ; Jeon, Namcheol ; Seo, Kwang Seok ; Kim, Dongsu ; Lee, Woo Sung ; Yoo, Chan Sei. / Hybrid current-mode class-s power amplifier with gan schottky diode using chip-on-board technique for 955 mhz lte signal. In: IEEE Transactions on Microwave Theory and Techniques. 2013 ; Vol. 61, No. 12. pp. 4168-4178.
@article{06ddfe84ae1142688dbb8b316b961555,
title = "Hybrid current-mode class-s power amplifier with gan schottky diode using chip-on-board technique for 955 mhz lte signal",
abstract = "This paper presents a gallium nitride (GaN)-based hybrid current-mode class-S (CMCS) power amplifier (PA) using a bandpass delta-sigma modulator (BPDSM) for a 955-MHz LTE signal. To enhance the drain efficiency of the CMCS PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. Also, GaN Schottky barrier diodes are fabricated in-house to protect the switching transistor against the high negative voltage swing. The differential output filter and balun composed of lumped LC resonators are integrated at the back of the switching transistor to extract amplified LTE signal from the output rectangular waveform, and the fabricated CMCS PA is measured and analyzed at four different states of BPDSM according to the coding efficiency from different input power level to obtain higher power and efficiency. Finally, a cavity bandpass filter (BPF) is added to the output circuit for a more accurate reduction of the harmonics and out-of-band noise signals to enhance system efficiency. From the measured results for an 8.5-dB PAPR 3 G LTE 10-MHz input signal, the proposed CMCS PA has a maximum average output power of 37.61 and 30.78 dBm, and the resulting drain efficiencies of 33.3{\%} and 38.6{\%} with the drain voltage of 19 and 7 V, respectively.",
author = "Park, {Jun Chul} and Yook, {Jong Gwan} and Park, {Bong Hyuk} and Namcheol Jeon and Seo, {Kwang Seok} and Dongsu Kim and Lee, {Woo Sung} and Yoo, {Chan Sei}",
year = "2013",
month = "12",
day = "1",
doi = "10.1109/TMTT.2013.2288084",
language = "English",
volume = "61",
pages = "4168--4178",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

Hybrid current-mode class-s power amplifier with gan schottky diode using chip-on-board technique for 955 mhz lte signal. / Park, Jun Chul; Yook, Jong Gwan; Park, Bong Hyuk; Jeon, Namcheol; Seo, Kwang Seok; Kim, Dongsu; Lee, Woo Sung; Yoo, Chan Sei.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 61, No. 12, 6665160, 01.12.2013, p. 4168-4178.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hybrid current-mode class-s power amplifier with gan schottky diode using chip-on-board technique for 955 mhz lte signal

AU - Park, Jun Chul

AU - Yook, Jong Gwan

AU - Park, Bong Hyuk

AU - Jeon, Namcheol

AU - Seo, Kwang Seok

AU - Kim, Dongsu

AU - Lee, Woo Sung

AU - Yoo, Chan Sei

PY - 2013/12/1

Y1 - 2013/12/1

N2 - This paper presents a gallium nitride (GaN)-based hybrid current-mode class-S (CMCS) power amplifier (PA) using a bandpass delta-sigma modulator (BPDSM) for a 955-MHz LTE signal. To enhance the drain efficiency of the CMCS PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. Also, GaN Schottky barrier diodes are fabricated in-house to protect the switching transistor against the high negative voltage swing. The differential output filter and balun composed of lumped LC resonators are integrated at the back of the switching transistor to extract amplified LTE signal from the output rectangular waveform, and the fabricated CMCS PA is measured and analyzed at four different states of BPDSM according to the coding efficiency from different input power level to obtain higher power and efficiency. Finally, a cavity bandpass filter (BPF) is added to the output circuit for a more accurate reduction of the harmonics and out-of-band noise signals to enhance system efficiency. From the measured results for an 8.5-dB PAPR 3 G LTE 10-MHz input signal, the proposed CMCS PA has a maximum average output power of 37.61 and 30.78 dBm, and the resulting drain efficiencies of 33.3% and 38.6% with the drain voltage of 19 and 7 V, respectively.

AB - This paper presents a gallium nitride (GaN)-based hybrid current-mode class-S (CMCS) power amplifier (PA) using a bandpass delta-sigma modulator (BPDSM) for a 955-MHz LTE signal. To enhance the drain efficiency of the CMCS PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. Also, GaN Schottky barrier diodes are fabricated in-house to protect the switching transistor against the high negative voltage swing. The differential output filter and balun composed of lumped LC resonators are integrated at the back of the switching transistor to extract amplified LTE signal from the output rectangular waveform, and the fabricated CMCS PA is measured and analyzed at four different states of BPDSM according to the coding efficiency from different input power level to obtain higher power and efficiency. Finally, a cavity bandpass filter (BPF) is added to the output circuit for a more accurate reduction of the harmonics and out-of-band noise signals to enhance system efficiency. From the measured results for an 8.5-dB PAPR 3 G LTE 10-MHz input signal, the proposed CMCS PA has a maximum average output power of 37.61 and 30.78 dBm, and the resulting drain efficiencies of 33.3% and 38.6% with the drain voltage of 19 and 7 V, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84890379010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890379010&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2013.2288084

DO - 10.1109/TMTT.2013.2288084

M3 - Article

AN - SCOPUS:84890379010

VL - 61

SP - 4168

EP - 4178

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 12

M1 - 6665160

ER -