Hybrid solution processed InGaO 3(ZnO) m thin films with periodic layered structures and thermoelectric properties

Jun Hyeon Kim, Dong Kyu Seo, Cheol Hyoun Ahn, Sang Woo Shin, Hyung Hee Cho, Hyung Koun Cho

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Short period superlattices comprising alternating InO 2 - and GaO +(ZnO) 2 layers were fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high temperature. The epitaxial ZnO buffer layer deposited by sputtering, and an amorphous IGZO layer fabricated from a solution mixture of 1:1:1.0 (In nitrate:Ga nitrate:Zn acetate) produced pure, single-phase InGaO 3(ZnO) 2 films with a well-ordered layered structure and smooth surfaces, which showed intense periodic diffraction peaks. Deviation from the stoichiometric sol condition induced coexisting InGaO 3(ZnO) 2 and other InGaO 3(ZnO) m phases and very rough surface morphologies. The solid-phase epitaxy of a single phase decreased electrical resistivity, increased the Seebeck coefficient, and significantly improved the power factor. An extremely low thermal conductivity (1.11 W m -1 K -1) was also obtained due to phonon scattering at the InO 2 - and GaO +(ZnO) 2 interfaces by the formation of the superlattice structure. This solution-based fabrication of superlattice structures could aid the development of advanced multicomponent oxides due to its simple growth process and the adaptability of compositions.

Original languageEnglish
Pages (from-to)16312-16317
Number of pages6
JournalJournal of Materials Chemistry
Volume22
Issue number32
DOIs
Publication statusPublished - 2012 Aug 28

Fingerprint

Epitaxial growth
Thin films
Nitrates
Phonon scattering
Seebeck coefficient
Superlattices
Polymethyl Methacrylate
Buffer layers
Sols
Oxides
Surface morphology
Sputtering
Thermal conductivity
Acetates
Diffraction
Fabrication
Chemical analysis
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Kim, Jun Hyeon ; Seo, Dong Kyu ; Ahn, Cheol Hyoun ; Shin, Sang Woo ; Cho, Hyung Hee ; Cho, Hyung Koun. / Hybrid solution processed InGaO 3(ZnO) m thin films with periodic layered structures and thermoelectric properties. In: Journal of Materials Chemistry. 2012 ; Vol. 22, No. 32. pp. 16312-16317.
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Hybrid solution processed InGaO 3(ZnO) m thin films with periodic layered structures and thermoelectric properties. / Kim, Jun Hyeon; Seo, Dong Kyu; Ahn, Cheol Hyoun; Shin, Sang Woo; Cho, Hyung Hee; Cho, Hyung Koun.

In: Journal of Materials Chemistry, Vol. 22, No. 32, 28.08.2012, p. 16312-16317.

Research output: Contribution to journalArticle

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AU - Seo, Dong Kyu

AU - Ahn, Cheol Hyoun

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AU - Cho, Hyung Hee

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N2 - Short period superlattices comprising alternating InO 2 - and GaO +(ZnO) 2 layers were fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high temperature. The epitaxial ZnO buffer layer deposited by sputtering, and an amorphous IGZO layer fabricated from a solution mixture of 1:1:1.0 (In nitrate:Ga nitrate:Zn acetate) produced pure, single-phase InGaO 3(ZnO) 2 films with a well-ordered layered structure and smooth surfaces, which showed intense periodic diffraction peaks. Deviation from the stoichiometric sol condition induced coexisting InGaO 3(ZnO) 2 and other InGaO 3(ZnO) m phases and very rough surface morphologies. The solid-phase epitaxy of a single phase decreased electrical resistivity, increased the Seebeck coefficient, and significantly improved the power factor. An extremely low thermal conductivity (1.11 W m -1 K -1) was also obtained due to phonon scattering at the InO 2 - and GaO +(ZnO) 2 interfaces by the formation of the superlattice structure. This solution-based fabrication of superlattice structures could aid the development of advanced multicomponent oxides due to its simple growth process and the adaptability of compositions.

AB - Short period superlattices comprising alternating InO 2 - and GaO +(ZnO) 2 layers were fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high temperature. The epitaxial ZnO buffer layer deposited by sputtering, and an amorphous IGZO layer fabricated from a solution mixture of 1:1:1.0 (In nitrate:Ga nitrate:Zn acetate) produced pure, single-phase InGaO 3(ZnO) 2 films with a well-ordered layered structure and smooth surfaces, which showed intense periodic diffraction peaks. Deviation from the stoichiometric sol condition induced coexisting InGaO 3(ZnO) 2 and other InGaO 3(ZnO) m phases and very rough surface morphologies. The solid-phase epitaxy of a single phase decreased electrical resistivity, increased the Seebeck coefficient, and significantly improved the power factor. An extremely low thermal conductivity (1.11 W m -1 K -1) was also obtained due to phonon scattering at the InO 2 - and GaO +(ZnO) 2 interfaces by the formation of the superlattice structure. This solution-based fabrication of superlattice structures could aid the development of advanced multicomponent oxides due to its simple growth process and the adaptability of compositions.

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