Abstract
Short period superlattices comprising alternating InO 2 - and GaO +(ZnO) 2 layers were fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high temperature. The epitaxial ZnO buffer layer deposited by sputtering, and an amorphous IGZO layer fabricated from a solution mixture of 1:1:1.0 (In nitrate:Ga nitrate:Zn acetate) produced pure, single-phase InGaO 3(ZnO) 2 films with a well-ordered layered structure and smooth surfaces, which showed intense periodic diffraction peaks. Deviation from the stoichiometric sol condition induced coexisting InGaO 3(ZnO) 2 and other InGaO 3(ZnO) m phases and very rough surface morphologies. The solid-phase epitaxy of a single phase decreased electrical resistivity, increased the Seebeck coefficient, and significantly improved the power factor. An extremely low thermal conductivity (1.11 W m -1 K -1) was also obtained due to phonon scattering at the InO 2 - and GaO +(ZnO) 2 interfaces by the formation of the superlattice structure. This solution-based fabrication of superlattice structures could aid the development of advanced multicomponent oxides due to its simple growth process and the adaptability of compositions.
| Original language | English |
|---|---|
| Pages (from-to) | 16312-16317 |
| Number of pages | 6 |
| Journal | Journal of Materials Chemistry |
| Volume | 22 |
| Issue number | 32 |
| DOIs | |
| Publication status | Published - 2012 Aug 28 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry
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Hybrid solution processed InGaO 3(ZnO) m thin films with periodic layered structures and thermoelectric properties. / Kim, Jun Hyeon; Seo, Dong Kyu; Ahn, Cheol Hyoun; Shin, Sang Woo; Cho, Hyung Hee; Cho, Hyung Koun.
In: Journal of Materials Chemistry, Vol. 22, No. 32, 28.08.2012, p. 16312-16317.Research output: Contribution to journal › Article
TY - JOUR
T1 - Hybrid solution processed InGaO 3(ZnO) m thin films with periodic layered structures and thermoelectric properties
AU - Kim, Jun Hyeon
AU - Seo, Dong Kyu
AU - Ahn, Cheol Hyoun
AU - Shin, Sang Woo
AU - Cho, Hyung Hee
AU - Cho, Hyung Koun
PY - 2012/8/28
Y1 - 2012/8/28
N2 - Short period superlattices comprising alternating InO 2 - and GaO +(ZnO) 2 layers were fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high temperature. The epitaxial ZnO buffer layer deposited by sputtering, and an amorphous IGZO layer fabricated from a solution mixture of 1:1:1.0 (In nitrate:Ga nitrate:Zn acetate) produced pure, single-phase InGaO 3(ZnO) 2 films with a well-ordered layered structure and smooth surfaces, which showed intense periodic diffraction peaks. Deviation from the stoichiometric sol condition induced coexisting InGaO 3(ZnO) 2 and other InGaO 3(ZnO) m phases and very rough surface morphologies. The solid-phase epitaxy of a single phase decreased electrical resistivity, increased the Seebeck coefficient, and significantly improved the power factor. An extremely low thermal conductivity (1.11 W m -1 K -1) was also obtained due to phonon scattering at the InO 2 - and GaO +(ZnO) 2 interfaces by the formation of the superlattice structure. This solution-based fabrication of superlattice structures could aid the development of advanced multicomponent oxides due to its simple growth process and the adaptability of compositions.
AB - Short period superlattices comprising alternating InO 2 - and GaO +(ZnO) 2 layers were fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high temperature. The epitaxial ZnO buffer layer deposited by sputtering, and an amorphous IGZO layer fabricated from a solution mixture of 1:1:1.0 (In nitrate:Ga nitrate:Zn acetate) produced pure, single-phase InGaO 3(ZnO) 2 films with a well-ordered layered structure and smooth surfaces, which showed intense periodic diffraction peaks. Deviation from the stoichiometric sol condition induced coexisting InGaO 3(ZnO) 2 and other InGaO 3(ZnO) m phases and very rough surface morphologies. The solid-phase epitaxy of a single phase decreased electrical resistivity, increased the Seebeck coefficient, and significantly improved the power factor. An extremely low thermal conductivity (1.11 W m -1 K -1) was also obtained due to phonon scattering at the InO 2 - and GaO +(ZnO) 2 interfaces by the formation of the superlattice structure. This solution-based fabrication of superlattice structures could aid the development of advanced multicomponent oxides due to its simple growth process and the adaptability of compositions.
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U2 - 10.1039/c2jm16887a
DO - 10.1039/c2jm16887a
M3 - Article
AN - SCOPUS:84864213239
VL - 22
SP - 16312
EP - 16317
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
SN - 0959-9428
IS - 32
ER -