Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application

Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong Hyun Ahn, Min Seok Jo, Hyunsang Hwang

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2 Citations (Scopus)

Abstract

The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.

Original languageEnglish
Pages (from-to)H80-H82
JournalElectrochemical and Solid-State Letters
Volume13
Issue number3
DOIs
Publication statusPublished - 2010 Jan 28

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Hasan, M., Yun, S. J., Koo, J. B., Park, S. H. K., Kim, Y. H., Kang, S. Y., Rho, J., Kim, J. H., Jang, H., Ahn, J. H., Jo, M. S., & Hwang, H. (2010). Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application. Electrochemical and Solid-State Letters, 13(3), H80-H82. https://doi.org/10.1149/1.3276689