Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application

Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong Hyun Ahn, Min Seok Jo, Hyunsang Hwang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.

Original languageEnglish
Pages (from-to)H80-H82
JournalElectrochemical and Solid-State Letters
Volume13
Issue number3
DOIs
Publication statusPublished - 2010 Jan 28

Fingerprint

silicon transistors
Silicon
Passivation
passivity
Hydrogen
Transistors
plastics
Plastic sheets
Plastics
Defects
defects
transistors
hydrogen
Threshold voltage
Electric properties
Annealing
threshold voltage
Mechanical properties
ribbons
flexibility

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Hasan, Musarrat ; Yun, Sun Jin ; Koo, Jae Bon ; Park, Sang Hee Ko ; Kim, Yong Hae ; Kang, Seung Youl ; Rho, Jonghyun ; Kim, Jee Hoon ; Jang, Houk ; Ahn, Jong Hyun ; Jo, Min Seok ; Hwang, Hyunsang. / Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 3. pp. H80-H82.
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abstract = "The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.",
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Hasan, M, Yun, SJ, Koo, JB, Park, SHK, Kim, YH, Kang, SY, Rho, J, Kim, JH, Jang, H, Ahn, JH, Jo, MS & Hwang, H 2010, 'Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application', Electrochemical and Solid-State Letters, vol. 13, no. 3, pp. H80-H82. https://doi.org/10.1149/1.3276689

Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application. / Hasan, Musarrat; Yun, Sun Jin; Koo, Jae Bon; Park, Sang Hee Ko; Kim, Yong Hae; Kang, Seung Youl; Rho, Jonghyun; Kim, Jee Hoon; Jang, Houk; Ahn, Jong Hyun; Jo, Min Seok; Hwang, Hyunsang.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 3, 28.01.2010, p. H80-H82.

Research output: Contribution to journalArticle

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AU - Hasan, Musarrat

AU - Yun, Sun Jin

AU - Koo, Jae Bon

AU - Park, Sang Hee Ko

AU - Kim, Yong Hae

AU - Kang, Seung Youl

AU - Rho, Jonghyun

AU - Kim, Jee Hoon

AU - Jang, Houk

AU - Ahn, Jong Hyun

AU - Jo, Min Seok

AU - Hwang, Hyunsang

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