Hydrogen effects on ZnSe/GaAs interface: A photoreflectance study

E. D. Sim, J. H. Song, S. K. Chang, H. K. Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

ZnSe/GaAs heteroepitaxial structures were prepared by metalorganic chemical vapor deposition with the use of thermal cleaning treatments at varying hydrogen flow rates in preparing the substrate. The photoreflectance spectra for the samples prepared revealed Franz-Keldysh oscillation (FKO) signals with the superimposition of free exciton transition features. The FKO signals changed depending on the hydrogen flow rate while the exciton transition features remained unchanged. Fitting through Aspnes' and Franz-Keldysh's model showed that the built-in electric field at the interface increased as the hydrogen flow rate decreased. These results imply that the hydrogen flow rate in the course of thermal etching plays a crucial role in the change of the energy-band profile at the interface.

Original languageEnglish
Pages (from-to)993-995
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number7
DOIs
Publication statusPublished - 2000 Aug 14

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flow velocity
hydrogen
excitons
oscillations
cleaning
metalorganic chemical vapor deposition
energy bands
etching
electric fields
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Sim, E. D. ; Song, J. H. ; Chang, S. K. ; Kim, H. K. / Hydrogen effects on ZnSe/GaAs interface : A photoreflectance study. In: Applied Physics Letters. 2000 ; Vol. 77, No. 7. pp. 993-995.
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Hydrogen effects on ZnSe/GaAs interface : A photoreflectance study. / Sim, E. D.; Song, J. H.; Chang, S. K.; Kim, H. K.

In: Applied Physics Letters, Vol. 77, No. 7, 14.08.2000, p. 993-995.

Research output: Contribution to journalArticle

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