Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si 0.7Ge 0.3 layers on Si(001)

T. Spila, P. Desjardins, A. Vailionis, H. Kim, N. Taylor, D. G. Cahill, J. E. Greene, S. Guillon, R. A. Masut

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