Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

Taejin Choi, Seungmin Yeo, Jeong Gyu Song, Seunggi Seo, Byeonghyeon Jang, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.

Original languageEnglish
Pages (from-to)12-20
Number of pages9
JournalSurface and Coatings Technology
Volume344
DOIs
Publication statusPublished - 2018 Jun 25

Fingerprint

Atomic layer deposition
Carbon films
Amorphous carbon
hydrogen plasma
atomic layer epitaxy
Hydrogen
Plasmas
Thin films
Carbon
carbon
thin films
Oxygen
Bromine
Hydroxylation
Diamond
Growth temperature
oxygen
bromine
Secondary ion mass spectrometry
pretreatment

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Choi, Taejin ; Yeo, Seungmin ; Song, Jeong Gyu ; Seo, Seunggi ; Jang, Byeonghyeon ; Kim, Soo Hyun ; Kim, Hyungjun. / Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films. In: Surface and Coatings Technology. 2018 ; Vol. 344. pp. 12-20.
@article{bfa7f5cfb8c34a649fd2ed76c2d112f7,
title = "Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films",
abstract = "Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.",
author = "Taejin Choi and Seungmin Yeo and Song, {Jeong Gyu} and Seunggi Seo and Byeonghyeon Jang and Kim, {Soo Hyun} and Hyungjun Kim",
year = "2018",
month = "6",
day = "25",
doi = "10.1016/j.surfcoat.2018.02.082",
language = "English",
volume = "344",
pages = "12--20",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",

}

Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films. / Choi, Taejin; Yeo, Seungmin; Song, Jeong Gyu; Seo, Seunggi; Jang, Byeonghyeon; Kim, Soo Hyun; Kim, Hyungjun.

In: Surface and Coatings Technology, Vol. 344, 25.06.2018, p. 12-20.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

AU - Choi, Taejin

AU - Yeo, Seungmin

AU - Song, Jeong Gyu

AU - Seo, Seunggi

AU - Jang, Byeonghyeon

AU - Kim, Soo Hyun

AU - Kim, Hyungjun

PY - 2018/6/25

Y1 - 2018/6/25

N2 - Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.

AB - Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.

UR - http://www.scopus.com/inward/record.url?scp=85042850071&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042850071&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2018.02.082

DO - 10.1016/j.surfcoat.2018.02.082

M3 - Article

AN - SCOPUS:85042850071

VL - 344

SP - 12

EP - 20

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -