Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

Taejin Choi, Seungmin Yeo, Jeong Gyu Song, Seunggi Seo, Byeonghyeon Jang, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.

Original languageEnglish
Pages (from-to)12-20
Number of pages9
JournalSurface and Coatings Technology
Volume344
DOIs
Publication statusPublished - 2018 Jun 25

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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