Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

Jangyup Son, Soogil Lee, Sang Jin Kim, Byung Cheol Park, Han Koo Lee, Sanghoon Kim, Jae Hoon Kim, Byung Hee Hong, Jongill Hong

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.

Original languageEnglish
Article number13261
JournalNature communications
Volume7
DOIs
Publication statusPublished - 2016 Nov 10

Fingerprint

Graphite
Field effect transistors
Monolayers
graphene
Energy gap
field effect transistors
broadband
Hydrogen
hydrogen plasma
Plasmas
Electronic properties
Thermodynamic properties
Optical properties
thermodynamic properties
Hot Temperature
Vapors
wafers
mechanical properties
vapors
Technology

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Son, Jangyup ; Lee, Soogil ; Kim, Sang Jin ; Park, Byung Cheol ; Lee, Han Koo ; Kim, Sanghoon ; Kim, Jae Hoon ; Hong, Byung Hee ; Hong, Jongill. / Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor. In: Nature communications. 2016 ; Vol. 7.
@article{fafc34abd6ce43c1904084021e0f531c,
title = "Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor",
abstract = "Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.",
author = "Jangyup Son and Soogil Lee and Kim, {Sang Jin} and Park, {Byung Cheol} and Lee, {Han Koo} and Sanghoon Kim and Kim, {Jae Hoon} and Hong, {Byung Hee} and Jongill Hong",
year = "2016",
month = "11",
day = "10",
doi = "10.1038/ncomms13261",
language = "English",
volume = "7",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor. / Son, Jangyup; Lee, Soogil; Kim, Sang Jin; Park, Byung Cheol; Lee, Han Koo; Kim, Sanghoon; Kim, Jae Hoon; Hong, Byung Hee; Hong, Jongill.

In: Nature communications, Vol. 7, 13261, 10.11.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

AU - Son, Jangyup

AU - Lee, Soogil

AU - Kim, Sang Jin

AU - Park, Byung Cheol

AU - Lee, Han Koo

AU - Kim, Sanghoon

AU - Kim, Jae Hoon

AU - Hong, Byung Hee

AU - Hong, Jongill

PY - 2016/11/10

Y1 - 2016/11/10

N2 - Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.

AB - Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84994853662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994853662&partnerID=8YFLogxK

U2 - 10.1038/ncomms13261

DO - 10.1038/ncomms13261

M3 - Article

VL - 7

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 13261

ER -