Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors

Mardhiah M. Sabri, Joohye Jung, Doo Hyun Yoon, Seokhyun Yoon, Young Jun Tak, Hyun Jae Kim

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Solution-processed indium oxide TFTs were fabricated by hydroxyl radical-assisted (HRA) decomposition and oxidation. The results show that decomposition and oxidation of carbon is more substantial than metal hydroxides, leading to the elimination of organic residues, correlated to a low interface trap density (S.S. = 0.45 V dec-1, NT = 1.11 × 1012 cm-2) in the device. The resultant HRA indium oxide TFTs exhibit improved electrical characteristics such as the mobility, the on/off current ratio, and the subthreshold swing as well as bias stabilities under PBS and NBS conditions.

Original languageEnglish
Pages (from-to)7499-7505
Number of pages7
JournalJournal of Materials Chemistry C
Volume3
Issue number28
DOIs
Publication statusPublished - 2015 Jul 28

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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