Hysteresis-free liquid crystal devices based on solution-derived oxide compound films treated by ion beam irradiation

Ju Hwan Lee, Hae Chang Jeong, Hong Gyu Park, Dae Shik Seo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Compounds with a high dielectric constant (high-k compounds) offer fast response times and low threshold voltages, but are limited by capacitance hysteresis. In this study, we successfully demonstrated high-performance liquid crystal (LC) devices without capacitance hysteresis, using ion beam (IB)-irradiated Hafnium Tin Oxide (HfSnO) films as an alignment layer and controlling the IB intensity. The HfSnO films were prepared using a simple, cost-effective solution process. Atomic force microscopy and X-ray photoelectron spectroscopy were performed to elucidate the LC alignment mechanism. The LC alignment state, pretilt angle, electro-optical performance, and capacitance hysteresis were evaluated as a function of IB intensity.

Original languageEnglish
Pages (from-to)54079-54084
Number of pages6
JournalRSC Advances
Volume5
Issue number67
DOIs
Publication statusPublished - 2015 Jan 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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