Identification of critical stacking faults in thin-film CdTe solar cells

Su Hyun Yoo, Keith T. Butler, Aloysius Soon, Ali Abbas, John M. Walls, Aron Walsh

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl2 is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

Original languageEnglish
Article number062104
JournalApplied Physics Letters
Volume105
Issue number6
DOIs
Publication statusPublished - 2014 Aug 11

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cadmium tellurides
crystal defects
solar cells
thin films
p-type semiconductors
electricity
traps
electrostatics
annealing
energy
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yoo, Su Hyun ; Butler, Keith T. ; Soon, Aloysius ; Abbas, Ali ; Walls, John M. ; Walsh, Aron. / Identification of critical stacking faults in thin-film CdTe solar cells. In: Applied Physics Letters. 2014 ; Vol. 105, No. 6.
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Identification of critical stacking faults in thin-film CdTe solar cells. / Yoo, Su Hyun; Butler, Keith T.; Soon, Aloysius; Abbas, Ali; Walls, John M.; Walsh, Aron.

In: Applied Physics Letters, Vol. 105, No. 6, 062104, 11.08.2014.

Research output: Contribution to journalArticle

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