Abstract
We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.
| Original language | English |
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| Title of host publication | 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers |
| DOIs | |
| Publication status | Published - 2012 Jul 16 |
| Event | 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan, Province of China Duration: 2012 Apr 23 → 2012 Apr 25 |
Publication series
| Name | International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
|---|---|
| ISSN (Print) | 1930-8868 |
Other
| Other | 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 |
|---|---|
| Country | Taiwan, Province of China |
| City | Hsinchu |
| Period | 12/4/23 → 12/4/25 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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III-V gate stack interface improvement to enable high mobility 11nm node CMOS. / Chen, Y. T.; Huang, J.; Price, J.; Lysaght, P.; Veksler, D.; Weiland, C.; Woicik, J. C.; Bersuker, G.; Hill, R.; Oh, Jungwoo; Kirsch, P. D.; Jammy, R.; Lee, J. C.
2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210157 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - III-V gate stack interface improvement to enable high mobility 11nm node CMOS
AU - Chen, Y. T.
AU - Huang, J.
AU - Price, J.
AU - Lysaght, P.
AU - Veksler, D.
AU - Weiland, C.
AU - Woicik, J. C.
AU - Bersuker, G.
AU - Hill, R.
AU - Oh, Jungwoo
AU - Kirsch, P. D.
AU - Jammy, R.
AU - Lee, J. C.
PY - 2012/7/16
Y1 - 2012/7/16
N2 - We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.
AB - We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.
UR - http://www.scopus.com/inward/record.url?scp=84863706793&partnerID=8YFLogxK
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U2 - 10.1109/VLSI-TSA.2012.6210157
DO - 10.1109/VLSI-TSA.2012.6210157
M3 - Conference contribution
AN - SCOPUS:84863706793
SN - 9781457720840
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
BT - 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
ER -