III-V gate stack interface improvement to enable high mobility 11nm node CMOS

Y. T. Chen, J. Huang, J. Price, P. Lysaght, D. Veksler, C. Weiland, J. C. Woicik, G. Bersuker, R. Hill, Jungwoo Oh, P. D. Kirsch, R. Jammy, J. C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.

Original languageEnglish
Title of host publication2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs
Publication statusPublished - 2012 Jul 16
Event2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan, Province of China
Duration: 2012 Apr 232012 Apr 25

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Other

Other2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
CountryTaiwan, Province of China
CityHsinchu
Period12/4/2312/4/25

Fingerprint

Atomic layer deposition
CMOS
Capacitance
oxidizers
atomic layer epitaxy
Photoemission
Electric potential
capacitance
Synchrotrons
traps
Hysteresis
Chemical reactions
electric potential
borders
Oxidation
chemical reactions
synchrotrons
photoelectric emission
industries
hysteresis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chen, Y. T., Huang, J., Price, J., Lysaght, P., Veksler, D., Weiland, C., ... Lee, J. C. (2012). III-V gate stack interface improvement to enable high mobility 11nm node CMOS. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers [6210157] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VLSI-TSA.2012.6210157
Chen, Y. T. ; Huang, J. ; Price, J. ; Lysaght, P. ; Veksler, D. ; Weiland, C. ; Woicik, J. C. ; Bersuker, G. ; Hill, R. ; Oh, Jungwoo ; Kirsch, P. D. ; Jammy, R. ; Lee, J. C. / III-V gate stack interface improvement to enable high mobility 11nm node CMOS. 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).
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abstract = "We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14{\%} in ZrO2), smaller CV hysteresis (37{\%} in Al2O3 and 47{\%} in ZrO2), fewer border traps (Qbr) (96{\%} in Al2O3 and 25{\%} in ZrO2), and lower mean interface traps density (Dit) (91{\%} in Al2O3 and 29{\%} in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.",
author = "Chen, {Y. T.} and J. Huang and J. Price and P. Lysaght and D. Veksler and C. Weiland and Woicik, {J. C.} and G. Bersuker and R. Hill and Jungwoo Oh and Kirsch, {P. D.} and R. Jammy and Lee, {J. C.}",
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Chen, YT, Huang, J, Price, J, Lysaght, P, Veksler, D, Weiland, C, Woicik, JC, Bersuker, G, Hill, R, Oh, J, Kirsch, PD, Jammy, R & Lee, JC 2012, III-V gate stack interface improvement to enable high mobility 11nm node CMOS. in 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers., 6210157, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012, Hsinchu, Taiwan, Province of China, 12/4/23. https://doi.org/10.1109/VLSI-TSA.2012.6210157

III-V gate stack interface improvement to enable high mobility 11nm node CMOS. / Chen, Y. T.; Huang, J.; Price, J.; Lysaght, P.; Veksler, D.; Weiland, C.; Woicik, J. C.; Bersuker, G.; Hill, R.; Oh, Jungwoo; Kirsch, P. D.; Jammy, R.; Lee, J. C.

2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210157 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - III-V gate stack interface improvement to enable high mobility 11nm node CMOS

AU - Chen, Y. T.

AU - Huang, J.

AU - Price, J.

AU - Lysaght, P.

AU - Veksler, D.

AU - Weiland, C.

AU - Woicik, J. C.

AU - Bersuker, G.

AU - Hill, R.

AU - Oh, Jungwoo

AU - Kirsch, P. D.

AU - Jammy, R.

AU - Lee, J. C.

PY - 2012/7/16

Y1 - 2012/7/16

N2 - We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.

AB - We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.

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U2 - 10.1109/VLSI-TSA.2012.6210157

DO - 10.1109/VLSI-TSA.2012.6210157

M3 - Conference contribution

AN - SCOPUS:84863706793

SN - 9781457720840

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers

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Chen YT, Huang J, Price J, Lysaght P, Veksler D, Weiland C et al. III-V gate stack interface improvement to enable high mobility 11nm node CMOS. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210157. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VLSI-TSA.2012.6210157