III-V gate stack interface improvement to enable high mobility 11nm node CMOS

Y. T. Chen; J. Huang; J. Price; P. Lysaght; D. Veksler; C. Weiland; J. C. Woicik; G. Bersuker; R. Hill; J. Oh; P. D. Kirsch; R. Jammy; J. C. Lee

doi:10.1109/VLSI-TSA.2012.6210157

III-V gate stack interface improvement to enable high mobility 11nm node CMOS

Y. T. Chen, J. Huang, J. Price, P. Lysaght, D. Veksler, C. Weiland, J. C. Woicik, G. Bersuker, R. Hill, J. Oh, P. D. Kirsch, R. Jammy, J. C. Lee

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report significant improvements in the high-k/In_0.53Ga _0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsO_x, GaO_x, and In ₂O₃ formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H₂O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO₂), smaller CV hysteresis (37% in Al₂O₃ and 47% in ZrO₂), fewer border traps (Q_br) (96% in Al₂O₃ and 25% in ZrO₂), and lower mean interface traps density (D_it) (91% in Al₂O₃ and 29% in ZrO₂). Improvements in I_d and G_m therefore have been achieved by replacing O₃ with H₂O oxidizer. Our work suggests that H ₂O-based high-k is more promising than O₃-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.

Original language	English
Title of host publication	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VLSI-TSA.2012.6210157
Publication status	Published - 2012
Event	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan, Province of China Duration: 2012 Apr 23 → 2012 Apr 25

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Other

Other	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	12/4/23 → 12/4/25

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VLSI-TSA.2012.6210157

Cite this

Chen, Y. T., Huang, J., Price, J., Lysaght, P., Veksler, D., Weiland, C., Woicik, J. C., Bersuker, G., Hill, R., Oh, J., Kirsch, P. D., Jammy, R., & Lee, J. C. (2012). III-V gate stack interface improvement to enable high mobility 11nm node CMOS. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers [6210157] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VLSI-TSA.2012.6210157

@inproceedings{13a3d652a3a44334b9fb3a9fc1bfb0d8,

title = "III-V gate stack interface improvement to enable high mobility 11nm node CMOS",

abstract = "We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.",

author = "Chen, {Y. T.} and J. Huang and J. Price and P. Lysaght and D. Veksler and C. Weiland and Woicik, {J. C.} and G. Bersuker and R. Hill and J. Oh and Kirsch, {P. D.} and R. Jammy and Lee, {J. C.}",

year = "2012",

doi = "10.1109/VLSI-TSA.2012.6210157",

language = "English",

isbn = "9781457720840",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers",

note = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 ; Conference date: 23-04-2012 Through 25-04-2012",

}

Chen, YT, Huang, J, Price, J, Lysaght, P, Veksler, D, Weiland, C, Woicik, JC, Bersuker, G, Hill, R, Oh, J, Kirsch, PD, Jammy, R & Lee, JC 2012, III-V gate stack interface improvement to enable high mobility 11nm node CMOS. in 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers., 6210157, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012, Hsinchu, Taiwan, Province of China, 12/4/23. https://doi.org/10.1109/VLSI-TSA.2012.6210157

III-V gate stack interface improvement to enable high mobility 11nm node CMOS. / Chen, Y. T.; Huang, J.; Price, J. et al.

2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210157 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - III-V gate stack interface improvement to enable high mobility 11nm node CMOS

AU - Chen, Y. T.

AU - Huang, J.

AU - Price, J.

AU - Lysaght, P.

AU - Veksler, D.

AU - Weiland, C.

AU - Woicik, J. C.

AU - Bersuker, G.

AU - Hill, R.

AU - Oh, J.

AU - Kirsch, P. D.

AU - Jammy, R.

AU - Lee, J. C.

PY - 2012

Y1 - 2012

N2 - We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.

AB - We report significant improvements in the high-k/In0.53Ga 0.47As interface quality by controlling atomic layer deposition (ALD) oxidizer chemistry. A step-by-step correlation between electrical data and chemical reactions at the high-k/InGaAs interface has been established using synchrotron photoemission. AsOx, GaOx, and In 2O3 formed during unintentional ALD surface oxidation and the increase of As-As bonds are responsible for degrading device quality. A better quality H2O-based high-k gate stack is evidenced by less capacitance-voltage (CV) dispersion (14% in ZrO2), smaller CV hysteresis (37% in Al2O3 and 47% in ZrO2), fewer border traps (Qbr) (96% in Al2O3 and 25% in ZrO2), and lower mean interface traps density (Dit) (91% in Al2O3 and 29% in ZrO2). Improvements in Id and Gm therefore have been achieved by replacing O3 with H2O oxidizer. Our work suggests that H 2O-based high-k is more promising than O3-based high-k. These results positively impact the industry's progress toward III-V CMOS at the 11nm node.

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UR - http://www.scopus.com/inward/citedby.url?scp=84863706793&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2012.6210157

DO - 10.1109/VLSI-TSA.2012.6210157

M3 - Conference contribution

AN - SCOPUS:84863706793

SN - 9781457720840

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers

T2 - 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012

Y2 - 23 April 2012 through 25 April 2012

ER -

Chen YT, Huang J, Price J, Lysaght P, Veksler D, Weiland C et al. III-V gate stack interface improvement to enable high mobility 11nm node CMOS. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210157. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VLSI-TSA.2012.6210157

III-V gate stack interface improvement to enable high mobility 11nm node CMOS

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