Impact of bias stability for crystalline InZnO thin-film transistors

Hojoong Kim, Daehwan Choi, Solah Park, Kyung Park, Hyun Woo Park, Kwun Bum Chung, Jang-Yeon Kwon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Crystallized InZnO thin-film transistors (IZO TFTs) are investigated to identify a potential for the maintenance of high electrical performances with a consistent stability. The transition from an amorphous to a crystallization structure appeared at an annealing temperature around 800 °C, and it was observed using transmission electron microscopy and time-of-flight secondary ion mass spectrometry analysis. The field-effect mobility of the crystallized IZO TFTs was boosted up to 53.58 cm2/V s compared with the 11.79 cm2/V s of the amorphous devices, and the bias stability under the negative stress was greatly enhanced even under illumination. The defect states related to the oxygen vacancy near the conduction band edge decreased after the crystallization, which is a form of electrical structure evidence for the reliability impact regarding the crystallized IZO TFTs.

Original languageEnglish
Article number232104
JournalApplied Physics Letters
Volume110
Issue number23
DOIs
Publication statusPublished - 2017 Jun 5

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transistors
thin films
crystallization
secondary ion mass spectrometry
maintenance
conduction bands
illumination
transmission electron microscopy
annealing
defects
oxygen
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, H., Choi, D., Park, S., Park, K., Park, H. W., Chung, K. B., & Kwon, J-Y. (2017). Impact of bias stability for crystalline InZnO thin-film transistors. Applied Physics Letters, 110(23), [232104]. https://doi.org/10.1063/1.4985295
Kim, Hojoong ; Choi, Daehwan ; Park, Solah ; Park, Kyung ; Park, Hyun Woo ; Chung, Kwun Bum ; Kwon, Jang-Yeon. / Impact of bias stability for crystalline InZnO thin-film transistors. In: Applied Physics Letters. 2017 ; Vol. 110, No. 23.
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Kim, H, Choi, D, Park, S, Park, K, Park, HW, Chung, KB & Kwon, J-Y 2017, 'Impact of bias stability for crystalline InZnO thin-film transistors', Applied Physics Letters, vol. 110, no. 23, 232104. https://doi.org/10.1063/1.4985295

Impact of bias stability for crystalline InZnO thin-film transistors. / Kim, Hojoong; Choi, Daehwan; Park, Solah; Park, Kyung; Park, Hyun Woo; Chung, Kwun Bum; Kwon, Jang-Yeon.

In: Applied Physics Letters, Vol. 110, No. 23, 232104, 05.06.2017.

Research output: Contribution to journalArticle

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Kim H, Choi D, Park S, Park K, Park HW, Chung KB et al. Impact of bias stability for crystalline InZnO thin-film transistors. Applied Physics Letters. 2017 Jun 5;110(23). 232104. https://doi.org/10.1063/1.4985295