Crystallized InZnO thin-film transistors (IZO TFTs) are investigated to identify a potential for the maintenance of high electrical performances with a consistent stability. The transition from an amorphous to a crystallization structure appeared at an annealing temperature around 800 °C, and it was observed using transmission electron microscopy and time-of-flight secondary ion mass spectrometry analysis. The field-effect mobility of the crystallized IZO TFTs was boosted up to 53.58 cm2/V s compared with the 11.79 cm2/V s of the amorphous devices, and the bias stability under the negative stress was greatly enhanced even under illumination. The defect states related to the oxygen vacancy near the conduction band edge decreased after the crystallization, which is a form of electrical structure evidence for the reliability impact regarding the crystallized IZO TFTs.
Bibliographical noteFunding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ICT Consilience Creative Program (IITP-2017-2017-0-01015) supervised by the IITP (Institute for Information and communications Technology Promotion). This work was also supported by Samsung Display Co., Ltd.
© 2017 Author(s).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)