Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

Junha Lee, Hanwool Jeong, Younghwi Yang, Jisu Kim, Seongook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we research on fin thickness (Tfin) and fin height (Hfin) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with Tfin and fin Hfin. This makes threshold voltage (Vth) vary. Thus, Tfin and Hfin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since Vth variation is a dominant factor determining them. If Tfin increases, the mean of RSNM (μRSNM) and the mean of WWTV (μWWTV) decreases and increases, respectively, while the standard deviation of RSNM (σRSNM) and WWTV (σWWTV) are almost not changed. If Hfin increases, the μRSNM and μWWTV decreases and increases, respectively, while both σRSNM and σWWTV decrease. However, for a sufficiently small Tfin, the effect of Hfin on μRSNM and μWWTV becomes negligible.

Original languageEnglish
Title of host publicationISOCC 2012 - 2012 International SoC Design Conference
Pages479-482
Number of pages4
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of
Duration: 2012 Nov 42012 Nov 7

Other

Other2012 International SoC Design Conference, ISOCC 2012
CountryKorea, Republic of
CityJeju Island
Period12/11/412/11/7

Fingerprint

Static random access storage
Electric potential
FinFET
Threshold voltage

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lee, J., Jeong, H., Yang, Y., Kim, J., & Jung, S. (2012). Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. In ISOCC 2012 - 2012 International SoC Design Conference (pp. 479-482). [6406900] https://doi.org/10.1109/ISOCC.2012.6406900
Lee, Junha ; Jeong, Hanwool ; Yang, Younghwi ; Kim, Jisu ; Jung, Seongook. / Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. ISOCC 2012 - 2012 International SoC Design Conference. 2012. pp. 479-482
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Lee, J, Jeong, H, Yang, Y, Kim, J & Jung, S 2012, Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. in ISOCC 2012 - 2012 International SoC Design Conference., 6406900, pp. 479-482, 2012 International SoC Design Conference, ISOCC 2012, Jeju Island, Korea, Republic of, 12/11/4. https://doi.org/10.1109/ISOCC.2012.6406900

Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. / Lee, Junha; Jeong, Hanwool; Yang, Younghwi; Kim, Jisu; Jung, Seongook.

ISOCC 2012 - 2012 International SoC Design Conference. 2012. p. 479-482 6406900.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee J, Jeong H, Yang Y, Kim J, Jung S. Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. In ISOCC 2012 - 2012 International SoC Design Conference. 2012. p. 479-482. 6406900 https://doi.org/10.1109/ISOCC.2012.6406900