We studied the reliability characteristics of cell transistors with two-different type gate sidewall spacer structures (O/N vs. N/O/N) in terms of Fowler-Nordheim (F-N) or gate-induced drain leakage (GIDL) stress-immunity. Through gate oxide stress-induced leakage current (SILC), junction leakage, GIDL, and drain current-gate voltage (Id-Vg) measurement, it was observed that the GIDL stress condition had much more critical effects on the reliability of cell array transistors than the F-N stress. Particularly, it was also found that the GIDL stress-induced device degradation was severer in case of the N/O/N gate sidewall spacer than the O/N spacer. It is thought that the relatively poor reliability of the N/O/N is closely related to the trap generation near the interface of the re-oxidized SiO2/nitride at the gate bottom edge as well as the defect generation due to the sidewall nitride film stress.
|Number of pages||4|
|Journal||IEEE International Reliability Physics Symposium Proceedings|
|Publication status||Published - 2004 Jan 1|
|Event||42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States|
Duration: 2004 Apr 25 → 2004 Apr 29
All Science Journal Classification (ASJC) codes