We studied the reliability characteristics of cell transistors with two-different type gate sidewall spacer structures (O/N vs. N/O/N) in terms of Fowler-Nordheim (F-N) or gate-induced drain leakage (GIDL) stress-immunity. Through gate oxide stress-induced leakage current (SILC), junction leakage, GIDL, and drain current-gate voltage (Id-Vg) measurements, it was observed that the GIDL stress condition had much more critical effects on the reliability of cell array transistors than the F-N stress. Particularly, it was also found that the GIDL stress-induced device degradation was severer in case of the N/O/N gate sidewall spacer than the O/N spacer. It is thought that the relatively poor reliability of the N/O/N is closely related to the trap generation near the interface of the re-oxidized SiO2/nitride at the gate bottom edge as well as the defect generation due to the sidewall nitride film stress.
|Number of pages||4|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|Publication status||Published - 2004|
|Event||2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States|
Duration: 2004 Apr 25 → 2004 Apr 29
Bibliographical noteFunding Information:
The work in the laboratory of J.G. is supported by the SYNAPSIS Foundation, the Béatrice Ederer-Weber Stiftung, the Floshield Foundation and the Alzheimer’s Association (grant no. NIRG-15-363964). The laboratory of D.M. is supported by the Foundation Jérôme Lejeune, Spanish Ministerio de Educación y Competitividad (grant no. BFU2014-53093). The laboratory of J.P.-T. is supported by the Spanish Ministerio de Economía, Industria y Competitividad and the FEDER programme from the EU (grant no. SAF2014-59469-R) and the CIBERNED. J.V.S.-M. is supported by a SYNAPSIS Foundation Fellowship for Advanced PostDocs and the Heidi Seiler-Stiftung foundation. H.H. is a Miguel Servet (CP14/00229) researcher funded by the Spanish Institute of Health Carlos III (ISCIII). B.A.S. is an EMBO long-term fellow (ALTF 1605-2014, Marie Curie Actions, LTFCOFUND2013, GA-2013-609409). A.M.-S. is a recipient of a FPI PhD studentship from MINECO. M.E. is an ICREA Research Professor. J.G. is an MQ fellow and a NARSAD Independent Investigator.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality