Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions

Kwan Yong Lim, Se Aug Jang, Yong Soo Kim, Heung Jae Cho, Jae Geun Oh, Su Ock Chung, Sung Joon Lee, Woo Kyung Sun, Jai Bum Suh, Hong Seon Yang, Hyun Chul Sohn

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

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Engineering & Materials Science