Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport

Han Sol Lee, Sam Park, June Yeong Lim, Sanghyuck Yu, Jongtae Ahn, Do Kyung Hwang, Yumin Sim, Je Ho Lee, Maeng Je Seong, Sehoon Oh, Hyoung Joon Choi, Seongil Im

Research output: Contribution to journalArticle

Abstract

Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

Original languageEnglish
Article number1901793
JournalSmall
DOIs
Publication statusAccepted/In press - 2019 Jan 1

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Transition metals
Field effect transistors
Metals
Doping (additives)
Temperature
Atomic layer deposition
Fermi level
Conduction bands
Temperature measurement
Density functional theory
Charge transfer
Hot Temperature
Atoms

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Engineering (miscellaneous)

Cite this

Lee, H. S., Park, S., Lim, J. Y., Yu, S., Ahn, J., Hwang, D. K., ... Im, S. (Accepted/In press). Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport. Small, [1901793]. https://doi.org/10.1002/smll.201901793
Lee, Han Sol ; Park, Sam ; Lim, June Yeong ; Yu, Sanghyuck ; Ahn, Jongtae ; Hwang, Do Kyung ; Sim, Yumin ; Lee, Je Ho ; Seong, Maeng Je ; Oh, Sehoon ; Choi, Hyoung Joon ; Im, Seongil. / Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport. In: Small. 2019.
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abstract = "Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.",
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Lee, HS, Park, S, Lim, JY, Yu, S, Ahn, J, Hwang, DK, Sim, Y, Lee, JH, Seong, MJ, Oh, S, Choi, HJ & Im, S 2019, 'Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport', Small. https://doi.org/10.1002/smll.201901793

Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport. / Lee, Han Sol; Park, Sam; Lim, June Yeong; Yu, Sanghyuck; Ahn, Jongtae; Hwang, Do Kyung; Sim, Yumin; Lee, Je Ho; Seong, Maeng Je; Oh, Sehoon; Choi, Hyoung Joon; Im, Seongil.

In: Small, 01.01.2019.

Research output: Contribution to journalArticle

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AU - Lee, Han Sol

AU - Park, Sam

AU - Lim, June Yeong

AU - Yu, Sanghyuck

AU - Ahn, Jongtae

AU - Hwang, Do Kyung

AU - Sim, Yumin

AU - Lee, Je Ho

AU - Seong, Maeng Je

AU - Oh, Sehoon

AU - Choi, Hyoung Joon

AU - Im, Seongil

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

AB - Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

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