Abstract
We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (Rs) of a tungsten polymetal gate electrode (W/WNx/poly- Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline Rs of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces, the wordline Rs increase in a small-gate-length sample subjected to long-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a long-time NH 3-preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation.
| Original language | English |
|---|---|
| Pages (from-to) | 1829-1832 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2004 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation. / Lim, Kwan Yong; Lee, Jung Ho; Cho, Heung Jae; Oh, Jae Geun; Hong, Byung Seop; Jang, Se Aug; Kim, Yong Soo; Yang, Hong Seon; Sohn, Hyunchul.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 01.01.2004, p. 1829-1832.Research output: Contribution to journal › Article
TY - JOUR
T1 - Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation
AU - Lim, Kwan Yong
AU - Lee, Jung Ho
AU - Cho, Heung Jae
AU - Oh, Jae Geun
AU - Hong, Byung Seop
AU - Jang, Se Aug
AU - Kim, Yong Soo
AU - Yang, Hong Seon
AU - Sohn, Hyunchul
PY - 2004/1/1
Y1 - 2004/1/1
N2 - We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (Rs) of a tungsten polymetal gate electrode (W/WNx/poly- Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline Rs of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces, the wordline Rs increase in a small-gate-length sample subjected to long-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a long-time NH 3-preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation.
AB - We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (Rs) of a tungsten polymetal gate electrode (W/WNx/poly- Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline Rs of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces, the wordline Rs increase in a small-gate-length sample subjected to long-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a long-time NH 3-preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation.
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U2 - 10.1143/JJAP.43.1829
DO - 10.1143/JJAP.43.1829
M3 - Article
AN - SCOPUS:3142566942
VL - 43
SP - 1829
EP - 1832
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -