Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation

Kwan Yong Lim, Jung Ho Lee, Heung Jae Cho, Jae Geun Oh, Byung Seop Hong, Se Aug Jang, Yong Soo Kim, Hong Seon Yang, Hyunchul Sohn

Research output: Contribution to journalArticle

Abstract

We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (Rs) of a tungsten polymetal gate electrode (W/WNx/poly- Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline Rs of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces, the wordline Rs increase in a small-gate-length sample subjected to long-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a long-time NH 3-preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation.

Original languageEnglish
Pages (from-to)1829-1832
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Jan 1

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sealing
Nitrides
nitrides
Tungsten
tungsten
Electrodes
Nitridation
electrodes
Sheet resistance
Polysilicon
mass spectroscopy
spacing
retarding
Spectroscopy
X ray diffraction
causes
Ions
diffraction
ions
x rays

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lim, Kwan Yong ; Lee, Jung Ho ; Cho, Heung Jae ; Oh, Jae Geun ; Hong, Byung Seop ; Jang, Se Aug ; Kim, Yong Soo ; Yang, Hong Seon ; Sohn, Hyunchul. / Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 4 B. pp. 1829-1832.
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Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation. / Lim, Kwan Yong; Lee, Jung Ho; Cho, Heung Jae; Oh, Jae Geun; Hong, Byung Seop; Jang, Se Aug; Kim, Yong Soo; Yang, Hong Seon; Sohn, Hyunchul.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 01.01.2004, p. 1829-1832.

Research output: Contribution to journalArticle

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AU - Lim, Kwan Yong

AU - Lee, Jung Ho

AU - Cho, Heung Jae

AU - Oh, Jae Geun

AU - Hong, Byung Seop

AU - Jang, Se Aug

AU - Kim, Yong Soo

AU - Yang, Hong Seon

AU - Sohn, Hyunchul

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N2 - We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (Rs) of a tungsten polymetal gate electrode (W/WNx/poly- Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline Rs of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces, the wordline Rs increase in a small-gate-length sample subjected to long-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a long-time NH 3-preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation.

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