Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs

Dong Chan Kim, Mann-Ho Cho, Jin Mwa Heo, Bon Young Koo, Chul Sung Kim, Young Jin Noh, Ji Hyun Kim, Kwun Bum Chung, Yugyun Shin, Dae Won Moon, U. In Chung, Joo Tae Moon

Research output: Contribution to journalConference article

Abstract

The performance of CMOSFETs with plasma-nitridation (PN) method for gate oxynitride was intensively investigated. The plasma nitridation method to suppress the negative shift of flat band voltage and gate tunneling current as well as to improve the reliability of MOSFET was proposed through our experiment. Microwave source (2.45GHz) plasma nitridation reduces the transition layer (sub-oxide) of nitrided oxide and nitrogen incorporation at the SiON/Si-sub interface, eventually suppresses the flat band voltage negative shift, and improves gate tunneling current, mobility, TDDB, and NBTI.

Original languageEnglish
Pages (from-to)233-241
Number of pages9
JournalECS Transactions
Volume1
Issue number1
Publication statusPublished - 2005 Dec 1
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 20

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Nitridation
Plasmas
Oxides
Plasma sources
Electric potential
Microwaves
Nitrogen
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, D. C., Cho, M-H., Heo, J. M., Koo, B. Y., Kim, C. S., Noh, Y. J., ... Moon, J. T. (2005). Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs. ECS Transactions, 1(1), 233-241.
Kim, Dong Chan ; Cho, Mann-Ho ; Heo, Jin Mwa ; Koo, Bon Young ; Kim, Chul Sung ; Noh, Young Jin ; Kim, Ji Hyun ; Chung, Kwun Bum ; Shin, Yugyun ; Moon, Dae Won ; Chung, U. In ; Moon, Joo Tae. / Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs. In: ECS Transactions. 2005 ; Vol. 1, No. 1. pp. 233-241.
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abstract = "The performance of CMOSFETs with plasma-nitridation (PN) method for gate oxynitride was intensively investigated. The plasma nitridation method to suppress the negative shift of flat band voltage and gate tunneling current as well as to improve the reliability of MOSFET was proposed through our experiment. Microwave source (2.45GHz) plasma nitridation reduces the transition layer (sub-oxide) of nitrided oxide and nitrogen incorporation at the SiON/Si-sub interface, eventually suppresses the flat band voltage negative shift, and improves gate tunneling current, mobility, TDDB, and NBTI.",
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Kim, DC, Cho, M-H, Heo, JM, Koo, BY, Kim, CS, Noh, YJ, Kim, JH, Chung, KB, Shin, Y, Moon, DW, Chung, UI & Moon, JT 2005, 'Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs', ECS Transactions, vol. 1, no. 1, pp. 233-241.

Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs. / Kim, Dong Chan; Cho, Mann-Ho; Heo, Jin Mwa; Koo, Bon Young; Kim, Chul Sung; Noh, Young Jin; Kim, Ji Hyun; Chung, Kwun Bum; Shin, Yugyun; Moon, Dae Won; Chung, U. In; Moon, Joo Tae.

In: ECS Transactions, Vol. 1, No. 1, 01.12.2005, p. 233-241.

Research output: Contribution to journalConference article

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AU - Kim, Dong Chan

AU - Cho, Mann-Ho

AU - Heo, Jin Mwa

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AU - Kim, Chul Sung

AU - Noh, Young Jin

AU - Kim, Ji Hyun

AU - Chung, Kwun Bum

AU - Shin, Yugyun

AU - Moon, Dae Won

AU - Chung, U. In

AU - Moon, Joo Tae

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AB - The performance of CMOSFETs with plasma-nitridation (PN) method for gate oxynitride was intensively investigated. The plasma nitridation method to suppress the negative shift of flat band voltage and gate tunneling current as well as to improve the reliability of MOSFET was proposed through our experiment. Microwave source (2.45GHz) plasma nitridation reduces the transition layer (sub-oxide) of nitrided oxide and nitrogen incorporation at the SiON/Si-sub interface, eventually suppresses the flat band voltage negative shift, and improves gate tunneling current, mobility, TDDB, and NBTI.

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Kim DC, Cho M-H, Heo JM, Koo BY, Kim CS, Noh YJ et al. Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs. ECS Transactions. 2005 Dec 1;1(1):233-241.