Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs

Dong Chan Kim, Mann Ho Cho, Jin Mwa Heo, Bon Young Koo, Chul Sung Kim, Young Jin Noh, Ji Hyun Kim, Kwun Bum Chung, Yugyun Shin, Dae Won Moon, U. In Chung, Joo Tae Moon

Research output: Contribution to journalConference articlepeer-review


The performance of CMOSFETs with plasma-nitridation (PN) method for gate oxynitride was intensively investigated. The plasma nitridation method to suppress the negative shift of flat band voltage and gate tunneling current as well as to improve the reliability of MOSFET was proposed through our experiment. Microwave source (2.45GHz) plasma nitridation reduces the transition layer (sub-oxide) of nitrided oxide and nitrogen incorporation at the SiON/Si-sub interface, eventually suppresses the flat band voltage negative shift, and improves gate tunneling current, mobility, TDDB, and NBTI.

Original languageEnglish
Pages (from-to)233-241
Number of pages9
JournalECS Transactions
Issue number1
Publication statusPublished - 2005
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 20

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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