The performance of CMOSFETs with plasma-nitridation (PN) method for gate oxynitride was intensively investigated. The plasma nitridation method to suppress the negative shift of flat band voltage and gate tunneling current as well as to improve the reliability of MOSFET was proposed through our experiment. Microwave source (2.45GHz) plasma nitridation reduces the transition layer (sub-oxide) of nitrided oxide and nitrogen incorporation at the SiON/Si-sub interface, eventually suppresses the flat band voltage negative shift, and improves gate tunneling current, mobility, TDDB, and NBTI.
|Number of pages||9|
|Publication status||Published - 2005 Dec 1|
|Event||5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: 2005 Oct 16 → 2005 Oct 20
All Science Journal Classification (ASJC) codes